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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
V. A. Volodin, G. N. Kamaev, V. A. Gritsenko, S. G. Cherkova, I. P. Prosvirin, “Composition and optical properties of amorphous plasma-chemical silicon oxynitride of variable composition a-SiO$_x$N$_y$:H”, Zhurnal Tekhnicheskoi Fiziki, 93:4 (2023), 575–582   |
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2022 |
| 2. |
V. A. Zinovyev, A. S. Deryabin, A. V. Katsyuba, V. A. Volodin, A. F. Zinov'eva, S. G. Cherkova, Zh. V. Smagina, A. V. Dvurechenskii, A. Yu. Krupin, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, “Structural and optical properties of two-dimensional Si and Ge layers formed by molecular beam epitaxy on CaF$_2$/Si(111) substrates”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 748–752 |
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2021 |
| 3. |
V. A. Zinov'ev, A. V. Katsyuba, V. A. Volodin, A. F. Zinov'eva, S. G. Cherkova, Zh. V. Smagina, A. V. Dvurechenskii, A. Yu. Krupin, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, “Atomic structure and optical properties of CaSi$_2$ layers grown on CaF$_2$/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 725–728 ; Semiconductors, 55:10 (2021), 808–811 |
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| 4. |
Zhang Fan, S. G. Cherkova, V. A. Volodin, “Formation of germanium nanocrystals in GeO[SiO$_{2}$] and GeO[SiO] films”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 507–512 |
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2020 |
| 5. |
M. P. Gambaryan, G. K. Krivyakin, S. G. Cherkova, M. Stoffel, H. Rinnert, M. Vergnat, V. A. Volodin, “Quantum size effects in germanium nanocrystals and amorphous nanoclusters in GeSi$_x$O$_y$ films”, Fizika Tverdogo Tela, 62:3 (2020), 434–441 ; Phys. Solid State, 62:3 (2020), 492–498 |
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2019 |
| 6. |
S. G. Cherkova, V. A. Skuratov, V. A. Volodin, “Luminescent properties of float zone silicon irradiated with swift heavy ions”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1467–1470 ; Semiconductors, 53:11 (2019), 1427–1430 |
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2013 |
| 7. |
G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. A. Volodin, A. G. Cherkov, A. Kh. Antonenko, G. N. Kamaev, V. A. Skuratov, “Influence of irradiation with swift heavy ions on multilayer Si/SiO$_2$ heterostructures”, Fizika i Tekhnika Poluprovodnikov, 47:3 (2013), 334–339 ; Semiconductors, 47:3 (2013), 358–364 |
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