|
|
|
Publications in Math-Net.Ru |
Citations |
|
2025 |
| 1. |
A. S. Tyutyunik, A. S. Mazinov, A. N. Gusev, E. V. Braga, S. V. Tomilin, K. A. Barkov, “Synthesis and sensory sensitivity of copper(I) iodide thin films to various groups of volatile analytes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025), 3–7   |
|
2023 |
| 2. |
A. S. Len'shin, Ya. A. Peshkov, O. V. Chernousova, K. A. Barkov, S. V. Kannykin, “Influence of etching modes on the morphology and composition of the surface of multilayer porous silicon”, Fizika i Tekhnika Poluprovodnikov, 57:8 (2023), 613–616 |
|
2022 |
| 3. |
S. Yu. Hydyrova, I. V. Mikhaylova, D. D. Vasilev, K. M. Moiseev, K. A. Barkov, S. A. Ivkov, N. S. Builov, E. S. Kersnovskiy, “Investigation of the structure and electrical properties of nanocomposite films W$_x$Si$_{1-x}$”, Fizika Tverdogo Tela, 64:9 (2022), 1176–1179 |
1
|
| 4. |
P. V. Seredin, Ali Obaid Radam, D. L. Goloshchapov, A. S. Len'shin, N. S. Builov, K. A. Barkov, D. N. Nesterov, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsent'ev, Sh. Sharofidinov, L. S. Vavilova, S. A. Kukushkin, I. A. Kasatkin, “Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon”, Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 547–552 |
|
2021 |
| 5. |
P. V. Seredin, K. A. Barkov, D. L. Goloshchapov, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. A. Lebedev, Sh. Sh. Sharofidinov, A. M. Mizerov, I. A. Kasatkin, T. Prutskij, “Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 704–710 ; Semiconductors, 55:12 (2021), 995–1001 |
|
2019 |
| 6. |
P. V. Seredin, A. V. Fedyukin, V. A. Terekhov, K. A. Barkov, I. N. Arsent'ev, A. D. Bondarev, E. V. Fomin, N. A. Pikhtin, “On the phase composition, morphology, and optical and electronic characteristics of AlN nanofilms grown on misoriented GaAs (100) substrates”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1584–1592 ; Semiconductors, 53:11 (2019), 1550–1557 |
1
|
|
2018 |
| 7. |
V. A. Terekhov, D. S. Usol'tseva, O. V. Serbin, I. E. Zanin, T. V. Kulikova, D. N. Nesterov, K. A. Barkov, A. V. Sitnikov, S. K. Lazaruk, È. P. Domashevskaya, “Phase formation and electronic structure peculiarities in the Al$_{1-x}$Si$_{x}$ film composites under the conditions of magnetron and ion-beam sputtering”, Fizika Tverdogo Tela, 60:5 (2018), 1005–1011 ; Phys. Solid State, 60:5 (2018), 1021–1028 |
1
|
|
2017 |
| 8. |
È. P. Domashevskaya, N. S. Builov, V. A. Terekhov, K. A. Barkov, V. G. Sitnikov, “Electronic structure and phase composition of dielectric interlayers in multilayer amorphous nanostructure [(CoFeB)$_{60}$C$_{40}$/SiO$_{2}$]$_{200}$”, Fizika Tverdogo Tela, 59:1 (2017), 161–166 ; Phys. Solid State, 59:1 (2017), 168–173 |
5
|
|
| Organisations |
|
|
