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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
A. S. Puzanov, I. Yu. Zabavichev, N. D. Abrosimova, V. V. Bibikova, E. V. Volkova, A. D. Nedoshivina, A. A. Potekhin, E. A. Tarasova, S. V. Khazanova, B. A. Loginov, D. Yu. Blinnikov, V. S. Vtorova, E. A. Lyashko, V. V. Kirillova, V. S. Makeev, A. R. Pervykh, S. V. Obolensky, “Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure”, Fizika i Tekhnika Poluprovodnikov, 58:12 (2024), 668–675   |
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2023 |
| 2. |
B. A. Loginov, D. Yu. Blinnikov, V. S. Vtorova, V. V. Kirillova, E. A. Lyashko, V. S. Makeev, A. R. Pervykh, N. D. Abrosimova, I. Yu. Zabavichev, A. S. Puzanov, E. V. Volkova, E. A. Tarasova, S. V. Obolensky, “Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure”, Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023), 1025–1031 |
| 3. |
I. Yu. Zabavichev, A. S. Puzanov, S. V. Obolensky, “Influence of single radiation defect cluster formation on transistor memory cell switching”, Fizika i Tekhnika Poluprovodnikov, 57:4 (2023), 270–275 |
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2022 |
| 4. |
I. Yu. Zabavichev, A. S. Puzanov, S. V. Obolensky, “The influence of a single radiation defect cluster forming on the transistor structure channel conductivity”, Fizika i Tekhnika Poluprovodnikov, 56:7 (2022), 637–641 |
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2021 |
| 5. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, E. A. Tarasova, N. V. Vostokov, V. A. Kozlov, S. V. Obolensky, “Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 743–747 ; Semiconductors, 55:10 (2021), 780–784 |
| 6. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, E. A. Tarasova, N. V. Vostokov, S. V. Obolensky, “Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 51–54 ; Tech. Phys. Lett., 47:4 (2021), 305–308 |
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2020 |
| 7. |
I. Yu. Zabavichev, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 945–951 ; Semiconductors, 54:9 (2020), 1134–1140 |
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2019 |
| 8. |
I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1279–1284 ; Semiconductors, 53:9 (2019), 1249–1254 |
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2017 |
| 9. |
I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1520–1524 ; Semiconductors, 51:11 (2017), 1466–1471 |
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| 10. |
I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1489–1492 ; Semiconductors, 51:11 (2017), 1435–1438 |
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