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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
V. O. Gridchin, A. M. Dautov, T. Shugabaev, V. V. Lendyashova, K. P. Kotlyar, G. P. Sotnik, D. A. Kozodaev, E. V. Pirogov, R. R. Reznik, D. N. Lobanov, A. Kuznetsov, A. D. Bolshakov, G. È. Cirlin, “Growth of atomically smooth AlN layers on Si(111) substrates through an amorphous Si$_x$N$_y$ layer by plasma-assisted molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:14 (2025), 39–43   |
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2023 |
| 2. |
V. O. Gridchin, I. P. Sotnikov, R. R. Reznik, S. D. Komarov, E. V. Pirogov, V. V. Lendyashova, K. P. Kotlyar, N. V. Kryzhanovskaya, G. È. Cirlin, “Effect of nitrogen plasma treatment on the structural and optical properties of InGaN”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023), 32–35 |
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2022 |
| 3. |
R. R. Reznik, V. O. Gridchin, K. P. Kotlyar, A. I. Khrebtov, E. V. Ubyivovk, S. V. Mikushev, D. Li, R. Radhakrishnan, J. F. Neto, N. Akopian, G. È. Cirlin, “Formation of InGaAs quantum dots in the body of AlGaAs nanowires via molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 56:7 (2022), 689–692 |
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2021 |
| 4. |
I. P. Sotnikov, K. P. Kotlyar, R. R. Reznik, V. O. Gridchin, V. V. Lendyashova, A. V. Vershinin, V. V. Lysak, D. A. Kirilenko, N. A. Bert, G. E. Cirlin, “Specific features of structural stresses in InGaN/GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 785–788 ; Semiconductors, 55:10 (2021), 795–798 |
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| 5. |
V. O. Gridchin, R. R. Reznik, K. P. Kotlyar, A. S. Dragunova, N. V. Kryzhanovskaya, A. Yu. Serov, S. A. Kukushkin, G. E. Cirlin, “MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 32–35 |
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2020 |
| 6. |
R. R. Reznik, V. O. Gridchin, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov, G. E. Cirlin, “Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 884–887 ; Semiconductors, 54:9 (2020), 1075–1077 |
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| 7. |
V. O. Gridchin, K. P. Kotlyar, R. R. Reznik, L. N. Dvoretskaya, A. V. Parfeneva, I. S. Mukhin, G. E. Cirlin, “Selective-area growth of GaN nanowires on patterned SiO$_{x}$/Si substrates by molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 32–35 ; Tech. Phys. Lett., 46:11 (2020), 1080–1083 |
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