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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
P. B. Boldyrevskii, D. O. Filatov, V. A. Belyakov, A. P. Gorshkov, I. V. Makartsev, A. V. Nezhdanov, M. V. Revin, À. D. Filatov, P. A. Yunin, “Effect of substrate misorientation on the properties of $p$-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 92:10 (2022), 1582–1587   |
| 2. |
A. D. Nedoshivina, I. V. Makartsev, S. V. Obolensky, “Model for multiparametric analysis of parameters short-channel transistors of HEMT type”, Fizika i Tekhnika Poluprovodnikov, 56:7 (2022), 618–623 |
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2021 |
| 3. |
V. A. Belyakov, I. V. Makartsev, A. G. Fefelov, S. V. Obolensky, A. P. Vasil'ev, A. G. Kuz'menkov, M. M. Kulagina, N. A. Maleev, “Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 890–894 |
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2019 |
| 4. |
N. A. Maleev, A. P. Vasil'ev, A. G. Kuz'menkov, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, S. N. Maleev, V. A. Belyakov, E. V. Petryakova, Yu. P. Kudryashova, E. L. Fefelova, I. V. Makartsev, S. A. Blokhin, F. A. Akhmedov, A. V. Egorov, A. G. Fefelov, V. M. Ustinov, “InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 29–33 ; Tech. Phys. Lett., 45:11 (2019), 1092–1096 |
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