D. A. Tashmukhammedova, B. E. Umirzakov, Y. S. Ergashov, M. B. Yusupjanova, R. M. Yorkulov, “Influence of Ba atom adsorption and implantation of Ba$^+$ ions on the electronic structure of single crystalline Ge”, Zhurnal Tekhnicheskoi Fiziki, 92:4 (2022), 638–642
2021
2.
B. E. Umirzakov, S. B. Donaev, R. M. Yorkulov, R. Kh. Ashurov, V. M. Rotstein, “Composition and morphology of Si(111) surface with SiO$_{2}$ film of different thickness”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1045–1048
3.
Z. A. Isakhanov, B. E. Umirzakov, S. S. Nasriddinov, Z. E. Ìuhtarov, R. M. Yorkulov, “Study of the critical angle of channeling of active metal ions through thin aluminum films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021), 12–14
4.
B. E. Umirzakov, Z. A. Isakhanov, G. Kh. Allayarova, R. M. Yorkulov, “The effect of stepwise postimplantation annealing on the composition and structure of silicon surface layers implanted with alkali metal ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:1 (2021), 15–19; Tech. Phys. Lett., 47:1 (2021), 11–15
2020
5.
Z. A. Isakhanov, I. O. Kosimov, B. E. Umirzakov, R. M. Yorkulov, “Modification of the surface properties of free Si–Cu films by implantation of active metal ions”, Zhurnal Tekhnicheskoi Fiziki, 90:1 (2020), 123–127; Tech. Phys., 65:1 (2020), 114–117
B. E. Umirzakov, M. K. Ruzibaeva, Z. A. Isakhanov, R. M. Yorkulov, “Formation of nanodimensional SiO$_{2}$ films on the surface of a free si/cu film system by O$_{2}^{+}$ ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 935–937; Tech. Phys., 64:6 (2019), 881–883
