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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
M. A. Putyato, V. V. Preobrazhenskii, B. R. Semyagin, N. V. Protasevich, I. B. Chistokhin, M. O. Petrushkov, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, V. V. Oleinik, S. V. Yanchur, A. V. Drondin, “InGaP/GaAs/Ge triple-junction solar cell with a thinned germanium substrate”, Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024), 783–794   |
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2021 |
| 2. |
K. S. Zhuravlev, A. M. Gilinskii, I. B. Chistokhin, N. A. Valisheva, D. V. Dmitriev, A. I. Toropov, M. S. Aksenov, A. L. Chizh, K. B. Mikitchuk, “High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021), 1158–1163 ; Tech. Phys., 66:9 (2021), 1072–1077  |
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2020 |
| 3. |
I. B. Chistokhin, K. B. Fritzler, “The influence of the conditions of getter formation in high-resistivity silicon on the characteristics of PIN photodiodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 11–13 ; Tech. Phys. Lett., 46:11 (2020), 1057–1059 |
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2019 |
| 4. |
M. A. Putyato, N. A. Valisheva, M. O. Petrushkov, V. V. Preobrazhenskii, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, G. I. Yurko, I. I. Nesterenko, “A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1071–1078 ; Tech. Phys., 64:7 (2019), 1010–1016 |
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A. L. Chizh, K. B. Mikitchuk, K. S. Zhuravlev, D. V. Dmitriev, A. I. Toropov, N. A. Valisheva, M. S. Aksenov, A. M. Gilinskii, I. B. Chistokhin, “High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 52–54 ; Tech. Phys. Lett., 45:7 (2019), 739–741 |
12
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| 6. |
I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, I. V. Marchishin, A. I. Toropov, K. S. Zhuravlev, “The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 59–62 ; Tech. Phys. Lett., 45:2 (2019), 180–184 |
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2018 |
| 7. |
M. O. Petrushkov, M. A. Putyato, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, M. Yu. Yesin, T. A. Gavrilova, A. V. Vasev, V. V. Preobrazhenskii, “Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018), 19–25 ; Tech. Phys. Lett., 44:7 (2018), 612–614 |
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2017 |
| 8. |
I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, K. S. Zhuravlev, A. A. Guzev, “Features of current flow in structures based on Au/Ti/$n$-InAlAs Schottky barriers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017), 83–89 ; Tech. Phys. Lett., 43:6 (2017), 581–583 |
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1992 |
| 9. |
I. B. Chistokhin, E. G. Tishkovskiy, N. N. Gerasimenko, “Current instabilities in photoresistance based on selenium-doped silicon”, Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1529–1535 |
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