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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
K. S. Zhuravlev, A. M. Gilinskii, I. B. Chistokhin, N. A. Valisheva, D. V. Dmitriev, A. I. Toropov, M. S. Aksenov, A. L. Chizh, K. B. Mikitchuk, “High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021), 1158–1163   ; Tech. Phys., 66:9 (2021), 1072–1077  |
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| 2. |
M. S. Aksenov, N. A. Valisheva, A. P. Kovchavtsev, “The effect of fluorine on the density of states at the anodic oxide layer/In$_{0.53}$Ga$_{0.47}$As interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:10 (2021), 11–14 ; Tech. Phys. Lett., 47:6 (2021), 478–481 |
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2020 |
| 3. |
A. A. Fuks, A. V. Bakulin, S. E. Kul'kova, N. A. Valisheva, A. V. Postnikov, “Effect of oxygen and fluorine absorption on the electronic structure of the InSb(111) surface”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 3–12 ; Semiconductors, 54:1 (2020), 1–10 |
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| 4. |
A. P. Kovchavtsev, M. S. Aksenov, A. E. Nastovjak, N. A. Valisheva, D. V. Gorshkov, G. Yu. Sidorov, D. V. Dmitriev, “Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 10–13 ; Tech. Phys. Lett., 46:5 (2020), 469–472 |
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2019 |
| 5. |
M. A. Putyato, N. A. Valisheva, M. O. Petrushkov, V. V. Preobrazhenskii, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, G. I. Yurko, I. I. Nesterenko, “A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1071–1078 ; Tech. Phys., 64:7 (2019), 1010–1016 |
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| 6. |
A. L. Chizh, K. B. Mikitchuk, K. S. Zhuravlev, D. V. Dmitriev, A. I. Toropov, N. A. Valisheva, M. S. Aksenov, A. M. Gilinskii, I. B. Chistokhin, “High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 52–54 ; Tech. Phys. Lett., 45:7 (2019), 739–741 |
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| 7. |
I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, I. V. Marchishin, A. I. Toropov, K. S. Zhuravlev, “The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 59–62 ; Tech. Phys. Lett., 45:2 (2019), 180–184 |
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2017 |
| 8. |
I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, K. S. Zhuravlev, A. A. Guzev, “Features of current flow in structures based on Au/Ti/$n$-InAlAs Schottky barriers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017), 83–89 ; Tech. Phys. Lett., 43:6 (2017), 581–583 |
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2014 |
| 9. |
D. Yu. Protasov, N. R. Vitsina, N. A. Valisheva, F. N. Dultsev, T. V. Malin, K. S. Zhuravlev, “Chromium mask for plasma-chemical etching of Al$_x$Ga$_{1-x}$N layers”, Zhurnal Tekhnicheskoi Fiziki, 84:9 (2014), 96–99 ; Tech. Phys., 59:9 (2014), 1356–1359 |
| 10. |
M. S. Aksenov, N. A. Valisheva, T. A. Levtsova, O. E. Tereshchenko, “Effect of fluorine on the electrical properties of anodic oxide/InAs(111)A interface”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 322–326 ; Semiconductors, 48:3 (2014), 307–311 |
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2013 |
| 11. |
N. A. Valisheva, V. N. Kruchinin, O. E. Tereshchenko, A. S. Kozhukhov, T. A. Levtsova, S. V. Rykhlitskii, D. V. Shcheglov, “Study of the morphology and optical properties of anodic oxide layers on InAs (111)III”, Fizika i Tekhnika Poluprovodnikov, 47:4 (2013), 532–537 ; Semiconductors, 47:4 (2013), 555–560 |
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2012 |
| 12. |
N. A. Valisheva, O. E. Tereshchenko, I. P. Prosvirin, A. V. Kalinkin, V. A. Golyashov, T. A. Levtsova, V. I. Bukhtiyarov, “Formation of anodic layers on InAs (111)III. Study of the chemical composition”, Fizika i Tekhnika Poluprovodnikov, 46:4 (2012), 569–575 ; Semiconductors, 46:4 (2012), 545–551 |
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| 13. |
S. V. Eremeev, N. A. Valisheva, O. E. Tereshchenko, S. E. Kul'kova, “Change in the electronic properties of an InAs (111)A surface at oxygen and fluorine adsorption”, Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 53–59 ; Semiconductors, 46:1 (2012), 49–55 |
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