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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
N. P. Stepina, A. O. Bazhenov, A. V. Shumilin, E. Yu. Zhdanov, D. V. Ishchenko, V. V. Kirienko, M. S. Aksenov, O. E. Tereshchenko, “Nonlinear Hall coefficient in films of a three-dimensional topological insulator”, Pis'ma v Zh. Èksper. Teoret. Fiz., 120:3 (2024), 208–213  ; JETP Letters, 120:3 (2024), 199–204 |
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2023 |
| 2. |
M. S. Aksenov, V. A. Golyashov, O. E. Tereshchenko, “Oxide/InAs(001) interface passivation with fluorine”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023), 6–9  |
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2022 |
| 3. |
M. S. Aksenov, E. R. Zakirov, A. P. Kovchavtsev, A. E. Nastovjak, D. V. Dmitriev, “Determination of the donor impurity concentration in thin $i$-InGaAs layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:21 (2022), 40–42 |
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2021 |
| 4. |
K. S. Zhuravlev, A. M. Gilinskii, I. B. Chistokhin, N. A. Valisheva, D. V. Dmitriev, A. I. Toropov, M. S. Aksenov, A. L. Chizh, K. B. Mikitchuk, “High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021), 1158–1163 ; Tech. Phys., 66:9 (2021), 1072–1077  |
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| 5. |
M. S. Aksenov, N. A. Valisheva, A. P. Kovchavtsev, “The effect of fluorine on the density of states at the anodic oxide layer/In$_{0.53}$Ga$_{0.47}$As interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:10 (2021), 11–14 ; Tech. Phys. Lett., 47:6 (2021), 478–481 |
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2020 |
| 6. |
A. P. Kovchavtsev, M. S. Aksenov, A. E. Nastovjak, N. A. Valisheva, D. V. Gorshkov, G. Yu. Sidorov, D. V. Dmitriev, “Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 10–13 ; Tech. Phys. Lett., 46:5 (2020), 469–472 |
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2019 |
| 7. |
A. L. Chizh, K. B. Mikitchuk, K. S. Zhuravlev, D. V. Dmitriev, A. I. Toropov, N. A. Valisheva, M. S. Aksenov, A. M. Gilinskii, I. B. Chistokhin, “High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 52–54 ; Tech. Phys. Lett., 45:7 (2019), 739–741 |
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| 8. |
I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, I. V. Marchishin, A. I. Toropov, K. S. Zhuravlev, “The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 59–62 ; Tech. Phys. Lett., 45:2 (2019), 180–184 |
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2017 |
| 9. |
I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, K. S. Zhuravlev, A. A. Guzev, “Features of current flow in structures based on Au/Ti/$n$-InAlAs Schottky barriers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017), 83–89 ; Tech. Phys. Lett., 43:6 (2017), 581–583 |
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2014 |
| 10. |
M. S. Aksenov, N. A. Valisheva, T. A. Levtsova, O. E. Tereshchenko, “Effect of fluorine on the electrical properties of anodic oxide/InAs(111)A interface”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 322–326 ; Semiconductors, 48:3 (2014), 307–311 |
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