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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
Y.-C. Lin, J.-S. Niu, W.-C. Liu, J.-H. Tsai, “Thermal stability of HfO$_2$|AlGaN|GaN normally-Off transistors with Ni|Au and Pt gate metals”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 618  ; Semiconductors, 55:7 (2021), 608–616 |
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2020 |
| 2. |
Y.-C. Lin, J.-S. Niu, W.-C. Liu, J.-H. Tsai, “Investigation of Pd|HfO$_2$|AlGaN|GaN enhancement-mode high electron mobility transistor with sensitization, activation, and electroless-plating approaches”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 684 ; Semiconductors, 54:7 (2020), 803–810 |
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2014 |
| 3. |
Jung-Hui Tsai, You-Ren Wu, Chung-Cheng Chiang, Fu-Min Wang, Wen-Chau Liu, “Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1254–1257  ; Semiconductors, 48:9 (2014), 1222–1225 |
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2013 |
| 4. |
Jung-Hui Tsai, Ching-Sung Lee, Jia-Cing Jhou, You-Ren Wu, Chung-Cheng Chiang, Yi-Ting Chao, Wen-Chau Liu, “Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP pacer at base-collector junction”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1400–1405 ; Semiconductors, 47:10 (2013), 1391–1396 |
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2012 |
| 5. |
Kuei-Yi Chu, Meng-Hsueh Chiang, Shiou-Ying Cheng, Wen-Chau Liu, “Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple $\delta$-doped sheets”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 214–218 ; Semiconductors, 46:2 (2012), 203–207 |
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