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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
E. A. Baranov, V. A. Nepomnyashchikh, V. O. Konstantinov, V. G. Shchukin, I. E. Merkulova, A. O. Zamchiy, N. A. Lunev, V. A. Volodin, A. A. Shapovalova, “Influence of current density on the structure of thin films of amorphous silicon suboxide during electron beam annealing”, Prikl. Mekh. Tekh. Fiz., 64:5 (2023), 52–58   ; J. Appl. Mech. Tech. Phys., 64:5 (2024), 778–783 |
| 2. |
V. G. Shchukin, V. O. Konstantinov, “Measurement of silicon melt temperature during electron beam refining”, Prikl. Mekh. Tekh. Fiz., 64:5 (2023), 39–44 ; J. Appl. Mech. Tech. Phys., 64:5 (2024), 767–771 |
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2022 |
| 3. |
V. O. Konstantinov, E. A. Baranov, Zhang Fan, V. G. Shchukin, A. O. Zamchiy, V. A. Volodin, “Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO$_2$] films using electron beam annealing”, Zhurnal Tekhnicheskoi Fiziki, 92:9 (2022), 1402–1409 |
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2021 |
| 4. |
I. E. Merkulova, A. O. Zamchiy, N. A. Lunev, V. O. Konstantinov, E. A. Baranov, “Effect of annealing temperature on the kinetics of aluminum-induced crystallization of silicon suboxide thin films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 39–42 |
| 5. |
N. A. Lunev, A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, V. O. Konstantinov, I. V. Korolkov, E. A. Maximovskiy, V. A. Volodin, “Gold-induced crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 35–38 ; Tech. Phys. Lett., 47:10 (2021), 726–729 |
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| 6. |
E. A. Baranov, V. O. Konstantinov, V. G. Shchukin, A. O. Zamchiy, I. E. Merkulova, N. A. Lunev, V. A. Volodin, “Electron-beam crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 26–28 ; Tech. Phys. Lett., 47:3 (2021), 263–265 |
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2019 |
| 7. |
V. G. Shchukin, V. O. Konstantinov, R. G. Sharafutdinov, “Deposition of amorphous and microcrystalline silicon films by gas-jet plasma-chemical method”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1721–1725 ; Semiconductors, 53:12 (2019), 1712–1716 |
| 8. |
V. G. Shchukin, R. G. Sharafutdinov, V. O. Konstantinov, “Deposition of silicon films doped with boron and phosphorus by the gas-jet plasma-chemical method”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 132–136 ; Semiconductors, 53:1 (2019), 127–131 |
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2018 |
| 9. |
V. G. Shchukin, V. O. Konstantinov, V. S. Morozov, “High-efficiency electron source with a hollow cathode in technologies of thin film deposition and surface treatment under forevacuum pressures”, Zhurnal Tekhnicheskoi Fiziki, 88:6 (2018), 914–919 ; Tech. Phys., 63:6 (2018), 888–893 |
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| 10. |
V. O. Konstantinov, V. G. Shchukin, R. G. Sharafutdinov, “Measuring the temperature and concentration secondary electrons in an argon electron-beam plasma”, Prikl. Mekh. Tekh. Fiz., 59:5 (2018), 115–122 ; J. Appl. Mech. Tech. Phys., 59:5 (2018), 867–873 |
| 11. |
R. G. Sharafutdinov, P. A. Skovorodko, V. G. Shchukin, V. O. Konstantinov, “Silicon film deposition using a gas-jet plasma-chemical method: experiment and gas-dynamic simulation”, Prikl. Mekh. Tekh. Fiz., 59:5 (2018), 22–30 ; J. Appl. Mech. Tech. Phys., 59:5 (2018), 786–793 |
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2007 |
| 12. |
V. O. Konstantinov, S. Ya. Khmel', “Gas flow activated in an electron-beam plasma”, Prikl. Mekh. Tekh. Fiz., 48:1 (2007), 3–10 ; J. Appl. Mech. Tech. Phys., 48:1 (2007), 1–6 |
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