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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
V. S. Krivobok, G. N. Eroshenko, A. V. Muratov, S. N. Nikolaev, A. V. Klekovkin, I. I. Minaev, K. A. Savin, D. A. Pashkeev, A. R. Dubovaya, Yu. A. Aleshchenko, S. I. Chentsov, “One-electron spectrum of a short-period InAs/GaSb superlattice with interface compensation of strains”, Pis'ma v Zh. Èksper. Teoret. Fiz., 120:5 (2024), 354–358  ; JETP Letters, 120:5 (2024), 341–345 |
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| 2. |
K. A. Savin, A. V. Klekovkin, I. I. Minaev, G. N. Eroshenko, V. S. Krivobok, D. E. Sviridov, A. E. Goncharov, S. N. Nikolaev, “Using current spreading resistance microscopy to determine the parameters of the barrier layer in NBN structures based on INSB”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:19 (2024), 33–35  |
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2022 |
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E. V. Kuz'min, A. V. Klekovkin, “Features of structuring and ablation of thin titanium films by femtosecond laser pulses”, Optics and Spectroscopy, 130:4 (2022), 517–521 |
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2021 |
| 4. |
V. A. Bespalov, E. A. Il'ichev, I. P. Kazakov, G. A. Kirpilenko, A. I. Kozlitin, P. V. Minakov, V. V. Saraikin, A. V. Klekovkin, S. V. Kuklev, G. N. Petrukhin, G. S. Rychkov, D. S. Sokolov, E. G. Teverovskaya, “Characteristics of solar-blind electron-optical converters with diamond photocathodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:9 (2021), 3–6 ; Tech. Phys. Lett., 47:6 (2021), 432–435 |
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V. S. Krivobok, A. D. Kondorskiy, D. A. Pashkeev, E. A. Ekimov, A. D. Shabrin, D. A. Litvinov, L. N. Grigor'eva, S. A. Kolosov, M. A. Chernopitskii, A. V. Klekovkin, P. A. Forsh, “A hybrid mid-IR photodetector based on semiconductor quantum wells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 33–36 ; Tech. Phys. Lett., 47:5 (2021), 388–391 |
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2017 |
| 6. |
D. N. Slapovskiy, A. Yu. Pavlov, V. Yu. Pavlov, A. V. Klekovkin, “Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 461–466 ; Semiconductors, 51:4 (2017), 438–443 |
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2016 |
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V. P. Martovitskii, Yu. G. Sadof'ev, A. V. Klekovkin, V. V. Saraikin, I. S. Vasil'evskii, “Investigation of the thermal stability of metastable GeSn epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1570–1575 ; Semiconductors, 50:11 (2016), 1548–1553 |
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2015 |
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Yu. G. Sadof'ev, V. P. Martovitskii, A. V. Klekovkin, V. V. Saraikin, I. S. Vasil'evskii, “Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1612–1618 ; Semiconductors, 49:12 (2015), 1564–1570 |
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| 9. |
Yu. G. Sadof'ev, V. P. Martovitskii, M. A. Bazalevsky, A. V. Klekovkin, D. V. Averyanov, I. S. Vasil'evskii, “Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 128–133 ; Semiconductors, 49:1 (2015), 124–129 |
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