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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
I. D. Yushkov, A. A. Gismatulin, G. N. Kamaev, M. Vergnat, V. A. Volodin, “Mechanism of charge transport
in ITO/[GeO$_x$]$_{(z)}$[SiO$_2$]$_{(1-z)}$ (0.25 $\le z\le1$)/$n^+$-Si MIS structures”, Fizika i Tekhnika Poluprovodnikov, 59:6 (2025), 363–369  |
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2023 |
| 2. |
V. A. Volodin, G. N. Kamaev, V. A. Gritsenko, S. G. Cherkova, I. P. Prosvirin, “Composition and optical properties of amorphous plasma-chemical silicon oxynitride of variable composition a-SiO$_x$N$_y$:H”, Zhurnal Tekhnicheskoi Fiziki, 93:4 (2023), 575–582  |
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2021 |
| 3. |
G. N. Kamaev, V. A. Volodin, G. K. Krivyakin, “Vertical ordering of amorphous Ge nanoclusters in multilayer $a$-Ge/$a$-Si:H heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021), 13–16 ; Tech. Phys. Lett., 47:8 (2021), 609–612 |
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2020 |
| 4. |
G. K. Krivyakin, V. A. Volodin, G. N. Kamaev, A. A. Popov, “Effect of interfaces and thickness on the crystallization kinetics of amorphous germanium films”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 643–647 ; Semiconductors, 54:7 (2020), 754–758 |
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2019 |
| 5. |
T. V. Perevalov, V. A. Volodin, Yu. N. Novikov, G. N. Kamaev, V. A. Gritsenko, I. P. Prosvirin, “Nanoscale potential fluctuations in SiO$_{x}$ synthesized by the plasma enhanced chemical vapor deposition”, Fizika Tverdogo Tela, 61:12 (2019), 2528–2535 ; Phys. Solid State, 61:12 (2019), 2560–2568 |
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| 6. |
V. N. Kruchinin, T. V. Perevalov, G. N. Kamaev, S. V. Rykhlitskii, V. A. Gritsenko, “Optical properties of nonstoichiometric silicon oxide SiO$_{x}$ ($x<$ 2)”, Optics and Spectroscopy, 127:5 (2019), 769–773 ; Optics and Spectroscopy, 127:5 (2019), 836–840 |
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2016 |
| 7. |
G. K. Krivyakin, V. A. Volodin, S. A. Kochubei, G. N. Kamaev, A. Purkrt, Z. Remes, R. Fajgar, T. H. Stuchliková, J. Stuchlik, “Optical properties of $p$–$i$–$n$ structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 952–957 ; Semiconductors, 50:7 (2016), 935–940 |
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| 8. |
A. A. Gismatulin, G. N. Kamaev, “Electrophysical properties of Si/SiO$_{2}$ nanostructures fabricated by direct bonding”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:11 (2016), 73–81 ; Tech. Phys. Lett., 42:6 (2016), 590–593 |
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2013 |
| 9. |
G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. A. Volodin, A. G. Cherkov, A. Kh. Antonenko, G. N. Kamaev, V. A. Skuratov, “Influence of irradiation with swift heavy ions on multilayer Si/SiO$_2$ heterostructures”, Fizika i Tekhnika Poluprovodnikov, 47:3 (2013), 334–339 ; Semiconductors, 47:3 (2013), 358–364 |
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2012 |
| 10. |
V. A. Stuchinskiy, G. N. Kamaev, M. D. Efremov, S. A. Arzhannikova, “A model to describe the humplike feature observed in the accumulation branch of capacitance-voltage characteristics of MOS capacitors with oxide-hosted silicon nanoparticles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:18 (2012), 45–52 ; Tech. Phys. Lett., 38:9 (2012), 845–848 |
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