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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
E. A. Vorobyeva, A. P. Evseev, A. A. Tatarintsev, D. O. Peshnina, A. A. Shemukhin, “Effect of electron beam energy on charging characteristics of polymer composites with the inclusion of carbon nanotubes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:12 (2023), 34–38   |
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2022 |
| 2. |
A. V. Kononina, Yu. V. Balakshin, K. A. Gonchar, I. V. Bozh'ev, A. A. Shemukhin, V. S. Chernysh, “Amorphization of silicon nanowires upon irradiation with argon ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022), 11–14 |
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2021 |
| 3. |
E. M. Elsehly, A. P. Evseev, E. A. Vorobyeva, Yu. V. Balakshin, N. G. Chechenin, A. A. Shemukhin, “Influence of irradiation with argon ions on the filtration properties of multi-walled carbon nanotubes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 21–25 |
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2020 |
| 4. |
D. S. Kireev, A. E. Ieshkin, A. A. Shemukhin, “Influence of target temperature on the formation of a nanorelief under irradiation with gas cluster ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:9 (2020), 3–6 ; Tech. Phys. Lett., 46:5 (2020), 409–412 |
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2019 |
| 5. |
A. I. Morkovkin, E. A. Vorobyeva, A. P. Evseev, Yu. V. Balakshin, A. A. Shemukhin, “Modification of carbon nanotubes wettability by ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1692–1696 ; Semiconductors, 53:12 (2019), 1683–1687 |
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| 6. |
Yu. V. Balakshin, A. V. Kozhemiako, S. Petrovic, M. Erich, A. A. Shemukhin, V. S. Chernysh, “Influence of the charge state of xenon ions on the depth distribution profile upon implantation into silicon”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1030–1036 ; Semiconductors, 53:8 (2019), 1011–1017 |
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| 7. |
A. V. Kozhemiako, A. P. Evseev, Yu. V. Balakshin, A. A. Shemukhin, “Features of defect formation in the nanostructured silicon under ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 810–815 ; Semiconductors, 53:6 (2019), 800–805 |
9
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2018 |
| 8. |
Yu. V. Balakshin, A. A. Shemukhin, A. V. Nazarov, A. V. Kozhemiako, V. S. Chernysh, “In situ modification and analysis of the composition and crystal structure of a silicon target by ion-beam methods”, Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018), 1900–1907 ; Tech. Phys., 63:12 (2018), 1861–1867 |
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2017 |
| 9. |
A. V. Kozhemiako, Yu. V. Balakshin, A. A. Shemukhin, V. S. Chernysh, “Study of the distribution profile of iron ions implanted into silicon”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 778–782 ; Semiconductors, 51:6 (2017), 745–750 |
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2016 |
| 10. |
D. S. Korolev, A. N. Mikhaylov, A. I. Belov, V. K. Vasil'ev, D. V. Guseinov, E. V. Okulich, A. A. Shemukhin, S. I. Surodin, D. E. Nikolichev, A. V. Nezhdanov, A. V. Pirogov, D. A. Pavlov, D. I. Tetelbaum, “Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 274–278 ; Semiconductors, 50:2 (2016), 271–275 |
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2014 |
| 11. |
A. A. Shemukhin, Yu. V. Balakshin, V. S. Chernysh, S. A. Golubkov, N. N. Egorov, A. I. Sidorov, “Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 535–538 ; Semiconductors, 48:4 (2014), 517–520 |
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| 12. |
A. A. Shemukhin, E. N. Muratova, “Investigation of transmission of 1.7-MeV He$^+$ beams through porous alumina membranes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:5 (2014), 67–74 ; Tech. Phys. Lett., 40:3 (2014), 219–221 |
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2012 |
| 13. |
A. A. Shemukhin, Yu. V. Balakshin, V. S. Chernysh, A. S. Patrakeev, S. A. Golubkov, N. N. Egorov, A. I. Sidorov, B. A. Malyukov, V. N. Statsenko, V. D. Chumak, “Fabrication of ultrafine silicon layers on sapphire”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012), 83–89 ; Tech. Phys. Lett., 38:10 (2012), 907–909 |
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