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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
A. B. Gordeeva, A. S. Vlasov, G. S. Gagis, A. E. Marichev, B. V. Pushnii, N. M. Shmidt, M. P. Scheglov, “Optical characterization of InGaAsP/InP(001) heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:15 (2024), 47–50   |
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2023 |
| 2. |
A. E. Marichev, V. S. Epoletov, B. V. Pushnii, A. S. Vlasov, A. E. Likhachev, “Development of the technology for production power laser conventers on wavelength 1.06 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 57:7 (2023), 590–593 |
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2021 |
| 3. |
A. E. Marichev, V. S. Epoletov, A. S. Vlasov, B. V. Pushnii, A. I. Lihachev, A. V. Nashchekin, “Replacing tunnel junctions in InP with conduction channels with GaP crystallites”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021), 52–54 |
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2020 |
| 4. |
V. S. Epoletov, A. E. Marichev, B. V. Pushnii, R. A. Salii, “Electrical contacts to InP-based structures with a Zn-doped subcontact layer to $p$-InP”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020), 13–14 ; Tech. Phys. Lett., 46:12 (2020), 1167–1169 |
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| 5. |
G. S. Gagis, V. I. Vasil’ev, R. V. Levin, A. E. Marichev, B. V. Pushnii, V. I. Kuchinskii, D. Yu. Kazantsev, B. Ya. Ber, “Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 22–24 ; Tech. Phys. Lett., 46:10 (2020), 961–963 |
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2019 |
| 6. |
G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnii, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, Yu. A. Kudriavtsev, A. S. Vlasov, T. B. Popova, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1512–1518 ; Semiconductors, 53:11 (2019), 1472–1478 |
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| 7. |
G. S. Gagis, A. S. Vlasov, R. V. Levin, A. E. Marichev, M. P. Scheglov, T. B. Popova, B. Ya. Ber, D. Yu. Kazantsev, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 22–25 ; Tech. Phys. Lett., 45:10 (2019), 1031–1034 |
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2018 |
| 8. |
V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, R. V. Levin, A. E. Marichev, N. Kh. Timoshina, B. V. Pushnii, “GaInAsP/InP-based laser power converters ($\lambda$ = 1064 nm)”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1641–1646 ; Semiconductors, 52:13 (2018), 1748–1753 |
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| 9. |
R. V. Levin, A. E. Marichev, E. V. Kontrosh, N. D. Prasolov, V. S. Kalinovskii, B. V. Pushnii, “Manufacture and study of switch $p$–$n$-junctions for cascade photovoltaic cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 25–31 ; Tech. Phys. Lett., 44:12 (2018), 1130–1132 |
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| 10. |
V. I. Vasil’ev, G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnii, M. P. Scheglov, V. I. Kuchinskii, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, T. B. Popova, “A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 17–24 ; Tech. Phys. Lett., 44:12 (2018), 1127–1129 |
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2017 |
| 11. |
A. E. Marichev, R. V. Levin, A. B. Gordeeva, G. S. Gagis, V. I. Kuchinskii, B. V. Pushnii, N. D. Prasolov, N. M. Shmidt, “Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017), 3–9 ; Tech. Phys. Lett., 43:1 (2017), 88–91 |
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