|
|
|
Publications in Math-Net.Ru |
Citations |
|
2024 |
| 1. |
S. A. Korolev, A. V. Zaitsev, “A three-millimeter-wave array radar with a mirror objective”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:14 (2024), 33–36   |
|
2023 |
| 2. |
A. M. Titova, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, A. V. Zaitsev, N. A. Alyabina, A. V. Kudrin, A. V. Zdoroveyshchev, “Ge/Si(001) heteroepitaxial layers doped in the HW CVD process by impurity evaporation from a sublimating Ge source”, Fizika i Tekhnika Poluprovodnikov, 57:9 (2023), 719–724 |
|
2021 |
| 3. |
A. V. Rykov, R. N. Kriukov, I. V. Samartsev, P. A. Yunin, V. G. Shengurov, A. V. Zaitsev, N. V. Baidus, “Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 37–40 ; Tech. Phys. Lett., 47:5 (2021), 413–416 |
1
|
|
2019 |
| 4. |
D. S. Prokhorov, V. G. Shengurov, S. A. Denisov, D. O. Filatov, A. V. Zdoroveyshchev, V. Yu. Chalkov, A. V. Zaitsev, M. V. Ved, M. V. Dorokhin, N. A. Baidakova, “Enhanced photoluminescence of heavily doped $n$-Ge/Si(001) layers”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1293–1296 ; Semiconductors, 53:9 (2019), 1262–1265 |
| 5. |
V. G. Shengurov, D. O. Filatov, S. A. Denisov, V. Yu. Chalkov, N. A. Alyabina, A. V. Zaitsev, “Tunnel diodes based on $n^{+}$-Ge/$p^{+}$-Si(001) epitaxial structures grown by the hot-wire chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1267–1270 ; Semiconductors, 53:9 (2019), 1238–1241 |
1
|
|
| Organisations |
|
|
