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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
N. A. Ivanov, O. V. Lobanov, V. V. Pashuk, M. O. Prygunov, K. G. Sizova, “Multiple upsets induced by protons and neutrons in electronic devices”, Zhurnal Tekhnicheskoi Fiziki, 90:4 (2020), 678–685   ; Tech. Phys., 65:4 (2020), 652–659 |
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2019 |
| 2. |
N. A. Ivanov, O. V. Lobanov, V. V. Pashuk, M. O. Prygunov, K. G. Sizova, “Multiple upsets induced by protons in 90-nm SRAMs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019), 20–22 ; Tech. Phys. Lett., 44:12 (2018), 1205–1207 |
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2018 |
| 3. |
N. A. Ivanov, O. V. Lobanov, V. V. Pashuk, M. O. Prygunov, K. G. Sizova, “Clusters of spikes in CMOS image sensors irradiated by protons and neutrons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018), 48–54 ; Tech. Phys. Lett., 44:11 (2018), 973–975 |
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2013 |
| 4. |
N. A. Ivanov, O. V. Lobanov, E. V. Mitin, V. V. Pashuk, M. G. Tverskoi, “Effect of fast protons and neutrons on charge-coupled devices”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:17 (2013), 35–43 ; Tech. Phys. Lett., 39:9 (2013), 771–774 |
5
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2011 |
| 5. |
N. A. Ivanov, E. V. Mitin, V. V. Pashuk, M. G. Tverskoi, “Proton-induced failures in high-power field-effect transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:2 (2011), 12–21 ; Tech. Phys. Lett., 37:1 (2011), 58–61 |
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