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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
O. V. Aleksandrov, S. A. Mokrushina, “Model of behavior of MOS structures during radiation-thermal treatments”, Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024), 1843–1847   |
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2022 |
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O. V. Aleksandrov, N. S. Tyapkin, S. A. Mokrushina, V. N. Fomin, “Effect of ionizing radiation on charge distribution and breakdown of mosfets”, Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 250–253 |
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2020 |
| 3. |
O. V. Aleksandrov, S. A. Mokrushina, “Model of the effect of the gate bias on MOS structures under ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 189–194 ; Semiconductors, 54:2 (2020), 240–245 |
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2018 |
| 4. |
O. V. Aleksandrov, S. A. Mokrushina, “Model for charge accumulation in $n$- and $p$-MOS transistors during tunneling electron injection from a gate”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 637–642 ; Semiconductors, 52:6 (2018), 783–788 |
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