|
|
|
Publications in Math-Net.Ru |
Citations |
|
2020 |
| 1. |
V. F. Bannaya, E. V. Nikitina, “Heating of electrons in pure Ge in a quantum magnetic field upon the thermal excitation of charge carriers”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 221–223   ; Semiconductors, 54:3 (2020), 275–277 |
|
2019 |
| 2. |
V. F. Bannaya, E. V. Nikitina, “Influence of a quantum magnetic field on the heating of charge carriers in pure germanium”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 13–17 ; Semiconductors, 53:1 (2019), 9–13 |
2
|
|
2018 |
| 3. |
V. F. Bannaya, E. V. Nikitina, “Electrical breakdown in pure $n$- and $p$-Si”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 291–294 ; Semiconductors, 52:3 (2018), 273–277 |
|
2017 |
| 4. |
V. F. Bannaya, “Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 302–304 ; Semiconductors, 51:3 (2017), 290–292 |
|
2015 |
| 5. |
V. F. Bannaya, “Electrical breakdown in nominally undoped $n$-Ge and $p$-Ge samples under interband photoexcitation”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1195–1197 ; Semiconductors, 49:9 (2015), 1160–1162 |
| 6. |
V. F. Bannaya, “Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1189–1194 ; Semiconductors, 49:9 (2015), 1154–1159 |
| 7. |
V. F. Bannaya, “Specific features of Hall measurements in doped semiconductors”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 779–781 ; Semiconductors, 49:6 (2015), 760–762 |
|
2014 |
| 8. |
V. F. Bannaya, “Methods for estimating the compensating-impurity concentration in Hg-doped Ge”, Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1444–1446 ; Semiconductors, 48:11 (2014), 1408–1410 |
|
| Organisations |
|
|
