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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
V. V. Bolotov, E. V. Knyazev, S. N. Nesov, K. E. Ivlev, I. V. Ponomareva, Yu. A. Sten'kin, E. A. Roslikova, D. V. Sokolov, “Multilayer selective sensor structures based on nonstoichiometric oxides of manganese and tin”, Fizika Tverdogo Tela, 66:10 (2024), 1680–1685   |
| 2. |
V. V. Bolotov, E. V. Knyazev, K. E. Ivlev, I. V. Ponomareva, Yu. A. Sten'kin, S. N. Nesov, E. A. Roslikova, “The employ of manganese oxide to improve the selectivity of gas sensitive SnO$_x$ films”, Fizika i Tekhnika Poluprovodnikov, 58:9 (2024), 478–481 |
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2023 |
| 3. |
K. E. Ivlev, V. V. Bolotov, I. V. Ponomareva, E. V. Knyazev, “Formation of channel silicon to create filter layers”, Fizika i Tekhnika Poluprovodnikov, 57:8 (2023), 628–631 |
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2022 |
| 4. |
V. V. Bolotov, E. V. Knyazev, I. V. Ponomareva, K. E. Ivlev, “Multilayer sensor structure based on porous silicon”, Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 576–579 |
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2020 |
| 5. |
V. V. Bolotov, K. E. Ivlev, E. V. Knyazev, I. V. Ponomareva, V. E. Roslikov, “Formation of multilayer structures with integrated membranes based on porous silicon”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 504–509 ; Semiconductors, 54:5 (2020), 609–613 |
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2017 |
| 6. |
V. V. Bolotov, E. V. Knyazev, I. V. Ponomareva, V. E. Kan, N. A. Davletkildeev, K. E. Ivlev, V. E. Roslikov, “Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 51–55 ; Semiconductors, 51:1 (2017), 49–53 |
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