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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
E. A. Tarasova, S. V. Obolensky, S. V. Khazanova, N. N. Grigoryeva, O. L. Golikov, A. B. Ivanov, A. S. Puzanov, “Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 968–973   ; Semiconductors, 54:9 (2020), 1155–1160 |
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