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Publications in Math-Net.Ru |
Citations |
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2026 |
| 1. |
M. S. Afanasiev, D. A. Belorusov, E. I. Goldman, G. V. Chucheva, A. V. Semchenko, V. A. Pilipenko, “Высокочастотные вольт-фарадные характеристики структур металл–Ba$_{0.8}$Sr$_{0.2}$TiO$_3$–термический окисел–кремний”, Fizika Tverdogo Tela, 68:3 (2026), 429–433  |
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2025 |
| 2. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva, “Reliability of MIS structures based on films of barium strontium titanate and hafnium oxide”, Fizika Tverdogo Tela, 67:10 (2025), 1928–1931  |
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2023 |
| 3. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, G. V. Chucheva, “Influence of the upper electrode material on the electrophysical properties of MDM structures based on ferroelectric films”, Fizika Tverdogo Tela, 65:6 (2023), 1060–1064 |
| 4. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva, “Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films”, Fizika Tverdogo Tela, 65:4 (2023), 572–576 |
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2020 |
| 5. |
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “Creation and investigation of metal–dielectric–semiconductor structures based on ferroelectric films”, Fizika Tverdogo Tela, 62:3 (2020), 422–426 ; Phys. Solid State, 62:3 (2020), 480–484 |
| 6. |
M. S. Afanasiev, E. I. Goldman, G. V. Chucheva, A. E. Nabiyev, J. И. Huseynov, N. Sh. Aliev, “Conductivity of metal–dielectric–semiconductor structures based on ferroelectric films”, Fizika Tverdogo Tela, 62:1 (2020), 121–124 ; Phys. Solid State, 62:1 (2020), 164–167 |
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| 7. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov, G. V. Chucheva, “Dependence of the electrophysical characteristics of metal–ferroelectric–semiconductor structures on the field-electrode material”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1219–1223 ; Semiconductors, 54:11 (2020), 1445–1449 |
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2019 |
| 8. |
V. K. Egorov, E. V. Egorov, M. S. Afanasiev, “Ion-beam and X-ray methods of elemental diagnostics of thin film coatings”, Fizika Tverdogo Tela, 61:12 (2019), 2454–2460 ; Phys. Solid State, 61:12 (2019), 2480–2486 |
| 9. |
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “The effect of synthesis temperature on the microstructure and electrophysical properties of BST 80/20 films”, Fizika Tverdogo Tela, 61:10 (2019), 1948–1952 ; Phys. Solid State, 61:10 (2019), 1910–1914 |
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2018 |
| 10. |
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, V. A. Luzanov, A. E. Nabiyev, V. G. Naryshkina, A. A. Sivov, G. V. Chucheva, “The influence of the substrate material on the structure and electrophysical properties of Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ thin films”, Fizika Tverdogo Tela, 60:5 (2018), 951–954 ; Phys. Solid State, 60:5 (2018), 954–957 |
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2015 |
| 11. |
M. S. Afanasiev, A. E. Nabiyev, G. V. Chucheva, “Optical monitoring of the deposition process of ferroelectric films”, Fizika Tverdogo Tela, 57:7 (2015), 1354–1357 ; Phys. Solid State, 57:7 (2015), 1377–1380 |
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| 12. |
D. A. Kiselev, M. S. Afanasiev, S. A. Levashov, G. V. Chucheva, “Growth kinetics of induced domains in Ba$_{0.8}$Sr$_{0.2}$TiO$_3$ ferroelectric thin films”, Fizika Tverdogo Tela, 57:6 (2015), 1134–1137 ; Phys. Solid State, 57:6 (2015), 1151–1154 |
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2013 |
| 13. |
M. S. Afanasiev, S. A. Levashov, A. Yu. Mityagin, G. V. Chucheva, A. E. Nabiyev, “Calculation of thermal parameters and technology of formation MPL microwave range”, Izv. Sarat. Univ. Physics, 13:1 (2013), 9–12 |
| 14. |
M. S. Afanasiev, A. Yu. Mityagin, G. V. Chucheva, “Voltage-capacitance characteristics of MFS-structures based on ferroelectric films”, Izv. Sarat. Univ. Physics, 13:1 (2013), 7–9 |
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2012 |
| 15. |
G. V. Chucheva, M. S. Afanasiev, I. A. Anisimov, A. I. Georgieva, S. A. Levashov, A. E. Nabiyev, “Determining parameters of planar capacitors based of thin film ferroelectric materials”, Izv. Sarat. Univ. Physics, 12:2 (2012), 8–11 |
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2009 |
| 16. |
M. S. Ivanov, M. S. Afanasiev, “Specific features of the formation of Ba$_x$Sr$_{1-x}$TiO$_3$ ferroelectric thin films on different substrates by radio-frequency sputtering”, Fizika Tverdogo Tela, 51:7 (2009), 1259–1262 ; Phys. Solid State, 51:7 (2009), 1328–1331 |
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