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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
D. V. Kolyada, D. D. Firsov, O. S. Komkov, I. V. Skvortsov, V. I. Mashanov, I. D. Loshkarev, V. A. Timofeev, “Влияние Ge нанослоев и квантовых точек на фотолюминесцентные свойства гетероструктур с множественными квантовыми ямами GeSiSn/Si”, Fizika Tverdogo Tela, 67:9 (2025), 1642–1646  |
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2024 |
| 2. |
V. A. Timofeev, I. V. Skvortsov, V. I. Mashanov, A. A. Bloshkin, V. V. Kirienko, I. D. Loshkarev, T. M. Zalyalov, T. V. Perevalov, D. R. Islamov, “Photoelectric properties of structures with GeSiSn|Ge multiple quantum wells and relaxed GeSiSn layers”, Fizika Tverdogo Tela, 66:11 (2024), 1871–1878  |
| 3. |
A. K. Bakarov, M. A. Sukhanov, A. S. Yaroshevich, I. D. Loshkarev, K. S. Zhuravlev, “InAs/GaSb superlattices for infrared photodetectors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024), 33–36 |
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2023 |
| 4. |
M. A. Sukhanov, D. Yu. Protasov, A. K. Bakarov, A. A. Makeeva, I. D. Loshkarev, K. S. Zhuravlev, “InSb/GaAs heterostructures for magnetic field sensors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023), 27–30 |
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2022 |
| 5. |
M. O. Petrushkov, M. A. Putyato, A. V. Vasev, D. S. Abramkin, E. A. Emelyanov, I. D. Loshkarev, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties”, Fizika i Tekhnika Poluprovodnikov, 56:10 (2022), 980–992 |
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2020 |
| 6. |
M. O. Petrushkov, D. S. Abramkin, E. A. Emelyanov, M. A. Putyato, A. V. Vasev, I. D. Loshkarev, M. Yu. Yesin, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1289–1295 ; Semiconductors, 54:12 (2020), 1548–1554 |
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2019 |
| 7. |
E. A. Emelyanov, A. V. Vasev, B. R. Semyagin, M. Yu. Yesin, I. D. Loshkarev, A. P. Vasilenko, M. A. Putyato, M. O. Petrushkov, V. V. Preobrazhenskii, “The growth of InAs$_{x}$Sb$_{1-x}$ solid solutions on miscuted GaAs(001) substrates by molecular-beam epitaxy method”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 512–519 ; Semiconductors, 53:4 (2019), 503–510 |
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2018 |
| 8. |
M. Yu. Yesin, A. I. Nikiforov, V. A. Timofeev, A. R. Tuktamyshev, V. I. Mashanov, I. D. Loshkarev, A. S. Deryabin, O. P. Pchelyakov, “Formation of a stepped Si(100) surface and its effect on the growth of Ge islands”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 409–413 ; Semiconductors, 52:3 (2018), 390–393 |
| 9. |
I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. O. Petrushkov, M. A. Putyato, “X-ray diffraction analysis of epitaxial layers with the properties of a dislocation filter”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 19–27 ; Tech. Phys. Lett., 44:7 (2018), 562–565 |
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2017 |
| 10. |
I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. A. Putyato, M. Yu. Yesin, M. O. Petrushkov, “The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:4 (2017), 64–71 ; Tech. Phys. Lett., 43:2 (2017), 213–215 |
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2015 |
| 11. |
Yu. G. Sidorov, M. V. Yakushev, V. S. Varavin, A. V. Kolesnikov, E. M. Trukhanov, I. V. Sabinina, I. D. Loshkarev, “Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates”, Fizika Tverdogo Tela, 57:11 (2015), 2095–2101 ; Phys. Solid State, 57:11 (2015), 2151–2158 |
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