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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “Creation and investigation of metal–dielectric–semiconductor structures based on ferroelectric films”, Fizika Tverdogo Tela, 62:3 (2020), 422–426   ; Phys. Solid State, 62:3 (2020), 480–484 |
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2019 |
| 2. |
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “The effect of synthesis temperature on the microstructure and electrophysical properties of BST 80/20 films”, Fizika Tverdogo Tela, 61:10 (2019), 1948–1952 ; Phys. Solid State, 61:10 (2019), 1910–1914 |
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| 3. |
E. I. Goldman, S. A. Levashov, G. V. Chucheva, “Features of the characteristics of field-resistant silicon–ultrathin oxide–polysilicon structures”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 481–484 ; Semiconductors, 53:4 (2019), 465–468 |
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| 4. |
E. I. Goldman, N. F. Kuharskaya, S. A. Levashov, G. V. Chucheva, “Determination of the parameters of metal–insulator–semiconductor structures with ultrathin insulating layer from high-frequency capacitance–voltage measurements”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 46–49 ; Semiconductors, 53:1 (2019), 42–45 |
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2018 |
| 5. |
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, V. A. Luzanov, A. E. Nabiyev, V. G. Naryshkina, A. A. Sivov, G. V. Chucheva, “The influence of the substrate material on the structure and electrophysical properties of Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ thin films”, Fizika Tverdogo Tela, 60:5 (2018), 951–954 ; Phys. Solid State, 60:5 (2018), 954–957 |
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2017 |
| 6. |
E. I. Goldman, S. A. Levashov, V. G. Naryshkina, G. V. Chucheva, “Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1185–1188 ; Semiconductors, 51:9 (2017), 1136–1140 |
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2015 |
| 7. |
D. A. Kiselev, M. S. Afanasiev, S. A. Levashov, G. V. Chucheva, “Growth kinetics of induced domains in Ba$_{0.8}$Sr$_{0.2}$TiO$_3$ ferroelectric thin films”, Fizika Tverdogo Tela, 57:6 (2015), 1134–1137 ; Phys. Solid State, 57:6 (2015), 1151–1154 |
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| 8. |
E. I. Goldman, A. I. Levashova, S. A. Levashov, G. V. Chucheva, “Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide”, Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 483–488 ; Semiconductors, 49:4 (2015), 472–478 |
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2013 |
| 9. |
M. S. Afanasiev, S. A. Levashov, A. Yu. Mityagin, G. V. Chucheva, A. E. Nabiyev, “Calculation of thermal parameters and technology of formation MPL microwave range”, Izv. Sarat. Univ. Physics, 13:1 (2013), 9–12 |
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2012 |
| 10. |
G. V. Chucheva, M. S. Afanasiev, I. A. Anisimov, A. I. Georgieva, S. A. Levashov, A. E. Nabiyev, “Determining parameters of planar capacitors based of thin film ferroelectric materials”, Izv. Sarat. Univ. Physics, 12:2 (2012), 8–11 |
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