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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
V. S. Khoroshilov, G. È. Shaibler, D. M. Kazantsev, S. A. Rozhkov, V. L. Alperovich, “Photoelectron transfer through $p$-GaAs(Cs, O)–vacuum interface with positive and negative electron affinity”, Fizika i Tekhnika Poluprovodnikov, 58:5 (2024), 227–232   |
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2023 |
| 2. |
D. M. Kazantsev, V. S. Khoroshilov, G. È. Shaibler, V. L. Alperovich, “Electron transfer through semiconductor-vacuum interfaces with negative and positive electron affinity: effect of jump in mass”, Fizika Tverdogo Tela, 65:8 (2023), 1271–1280 |
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| 3. |
V. S. Khoroshilov, D. M. Kazantsev, S. A. Rozhkov, V. L. Alperovich, “Surface photovoltage in heavily doped $p^+$-GaAs with adsorbed cesium and oxygen overlayers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:21 (2023), 24–28 |
| 4. |
V. S. Khoroshilov, D. E. Protopopov, D. M. Kazantsev, G. È. Shaibler, V. L. Alperovich, “Light trapping and subbandgap maximum in photoemission quantum yield spectra of $p$-GaAs(Cs,O)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023), 23–26 |
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2022 |
| 5. |
D. M. Kazantsev, V. L. Alperovich, V. A. Tkachenko, Z. D. Kvon, “Spectral maximum in the terahertz photoconductance of a quantum point contact”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:2 (2022), 116–122 ; JETP Letters, 116:2 (2022), 117–122 |
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2018 |
| 6. |
D. M. Kazantsev, I. O. Akhundov, V. L. Alperovich, N. L. Shwartz, A. S. Kozhukhov, A. V. Latyshev, “Thermal smoothing and roughening of GaAs surfaces: experiment and Monte Carlo simulation”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 514 ; Semiconductors, 52:5 (2018), 618–621 |
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