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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
T. A. Shobolova, A. V. Korotkov, E. V. Petryakova, A. V. Lipatnikov, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Comparison of the radiation resistance of prospective bipolar and heterobipolar transistors”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1391–1394   ; Semiconductors, 53:10 (2019), 1353–1356 |
| 2. |
N. A. Maleev, A. P. Vasil'ev, A. G. Kuz'menkov, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, S. N. Maleev, V. A. Belyakov, E. V. Petryakova, Yu. P. Kudryashova, E. L. Fefelova, I. V. Makartsev, S. A. Blokhin, F. A. Akhmedov, A. V. Egorov, A. G. Fefelov, V. M. Ustinov, “InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 29–33 ; Tech. Phys. Lett., 45:11 (2019), 1092–1096 |
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