|
|
|
Publications in Math-Net.Ru |
Citations |
|
2019 |
| 1. |
N. A. Maleev, A. P. Vasil'ev, A. G. Kuz'menkov, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, S. N. Maleev, V. A. Belyakov, E. V. Petryakova, Yu. P. Kudryashova, E. L. Fefelova, I. V. Makartsev, S. A. Blokhin, F. A. Akhmedov, A. V. Egorov, A. G. Fefelov, V. M. Ustinov, “InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 29–33   ; Tech. Phys. Lett., 45:11 (2019), 1092–1096 |
3
|
|
2018 |
| 2. |
N. A. Maleev, M. A. Bobrov, A. G. Kuz'menkov, A. P. Vasil'ev, M. M. Kulagina, S. N. Maleev, S. A. Blokhin, V. N. Nevedomskiy, V. M. Ustinov, “Epitaxial InGaAs/InAlAs/AlAs structures for heterobarrier varactors with low leakage current”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018), 16–23 ; Tech. Phys. Lett., 44:10 (2018), 862–864 |
3
|
|
2017 |
| 3. |
N. A. Maleev, V. A. Belyakov, A. P. Vasil'ev, M. A. Bobrov, S. A. Blokhin, M. M. Kulagina, A. G. Kuz'menkov, V. N. Nevedomskiy, Yu. A. Guseva, S. N. Maleev, I. V. Ladenkov, E. L. Fefelova, A. G. Fefelov, V. M. Ustinov, “Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1484–1488 ; Semiconductors, 51:11 (2017), 1431–1434 |
4
|
|
