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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
N. A. Fominykh, N. V. Kryzhanovskaya, S. D. Komarov, I. S. Makhov, K. A. Ivanov, È. I. Moiseev, E. E. Antonov, Yu. A. Guseva, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, R. A. Khabibullin, R. R. Galiev, A. Yu. Pavlov, K. N. Tomosh, A. E. Zhukov, “Microdisk lasers based on InGaAs/GaAs quantum dots monolithically integrated with a waveguide”, Fizika i Tekhnika Poluprovodnikov, 58:2 (2024), 107–113   |
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2023 |
| 2. |
N. A. Fominykh, N. V. Kryzhanovskaya, K. A. Ivanov, S. D. Komarov, È. I. Moiseev, A. M. Nadtochiy, J. A. Guseva, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, R. A. Khabibullin, R. R. Galiev, A. Yu. Pavlov, K. N. Tomosh, I. S. Makhov, M. V. Maksimov, A. E. Zhukov, “Investigation of high-temperature generation of microdisk lasers with optically coupled waveguide”, Optics and Spectroscopy, 131:11 (2023), 1483–1485 |
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2018 |
| 3. |
S. V. Mikhailovich, A. Yu. Pavlov, K. N. Tomosh, Yu. V. Fedorov, “Low-energy defectless dry etching of the AlGaN/AlN/GaN HEMT barrier layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 61–67 ; Tech. Phys. Lett., 44:5 (2018), 435–437 |
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2016 |
| 4. |
K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, P. P. Maltsev, “Investigation of the fabrication processes of AlGaN/AlN/GaN ÍÅÌÒs with in situ Si$_{3}$N$_{4}$ passivation”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1434–1438 ; Semiconductors, 50:10 (2016), 1416–1420 |
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R. A. Khabibullin, N. V. Shchavruk, A. Yu. Pavlov, D. S. Ponomarev, K. N. Tomosh, R. R. Galiev, P. P. Maltsev, A. E. Zhukov, G. E. Cirlin, F. I. Zubov, Zh. I. Alferov, “Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1395–1400 ; Semiconductors, 50:10 (2016), 1377–1382 |
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S. S. Arutyunyan, A. Yu. Pavlov, V. Yu. Pavlov, K. N. Tomosh, Yu. V. Fedorov, “On a two-layer Si$_{3}$N$_{4}$/SiO$_{2}$ dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1138–1142 ; Semiconductors, 50:8 (2016), 1117–1121 |
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