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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
S. A. Mintairov, V. M. Emelyanov, N. A. Kalyuzhnyy, M. V. Nakhimovich, V. V. Oleinik, R. A. Salii, A. F. Skachkov, L. N. Skachkova, M. Z. Shvarts, “Tandem GaInP/Ga(In)As structures for triple-junction hybrid GaInP/Ga(In)As//Si solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:13 (2025), 40–43   |
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2024 |
| 2. |
M. A. Putyato, V. V. Preobrazhenskii, B. R. Semyagin, N. V. Protasevich, I. B. Chistokhin, M. O. Petrushkov, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, V. V. Oleinik, S. V. Yanchur, A. V. Drondin, “InGaP/GaAs/Ge triple-junction solar cell with a thinned germanium substrate”, Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024), 783–794 |
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2019 |
| 3. |
M. A. Putyato, N. A. Valisheva, M. O. Petrushkov, V. V. Preobrazhenskii, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, G. I. Yurko, I. I. Nesterenko, “A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1071–1078 ; Tech. Phys., 64:7 (2019), 1010–1016 |
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2015 |
| 4. |
A. F. Skachkov, “GaInP semiconductor compounds doped with the Sb isovalent impurity”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 593–595 ; Semiconductors, 49:5 (2015), 579–581 |
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