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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
D. A. Tashmukhammedova, B. E. Umirzakov, Y. S. Ergashov, M. B. Yusupjanova, R. M. Yorkulov, “Influence of Ba atom adsorption and implantation of Ba$^+$ ions on the electronic structure of single crystalline Ge”, Zhurnal Tekhnicheskoi Fiziki, 92:4 (2022), 638–642   |
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2019 |
| 2. |
B. E. Umirzakov, D. A. Tashmukhamedova, M. A. Tursunov, Y. S. Ergashov, G. Kh. Allayarova, “Escape depth of secondary and photoelectrons from CdTe films with a Ba film”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1115–1117 ; Tech. Phys., 64:7 (2019), 1051–1054 |
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2018 |
| 3. |
Y. S. Ergashov, B. E. Umirzakov, “Structure and properties of a bilayer nanodimensional CoSi$_{2}$/Si/CoSi$_{2}$/Si system obtained by ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018), 1859–1862 ; Tech. Phys., 63:12 (2018), 1820–1823 |
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2017 |
| 4. |
Y. S. Ergashov, “Composition and properties of nanoscale Si structures formed on the CoSi$_{2}$/Si(111) surface by Ar$^+$ ion bombardment”, Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 758–761 ; Tech. Phys., 62:5 (2017), 777–780 |
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2016 |
| 5. |
Y. S. Ergashov, Z. A. Isakhanov, B. E. Umirzakov, “Transmission of electromagnetic waves through thin Cu films”, Zhurnal Tekhnicheskoi Fiziki, 86:6 (2016), 156–158 ; Tech. Phys., 61:6 (2016), 953–955 |
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