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Publications in Math-Net.Ru |
Citations |
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2018 |
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P. B. Boldyrevskii, D. O. Filatov, I. A. Kazantseva, M. V. Revin, D. S. Smotrin, P. A. Yunin, “Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers”, Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018), 219–223   ; Tech. Phys., 63:2 (2018), 211–215 |
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2016 |
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E. A. Tarasova, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, Yu. N. Sveshnikov, V. I. Egorkin, V. A. Ivanov, G. V. Medvedev, D. S. Smotrin, “Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 331–338 ; Semiconductors, 50:3 (2016), 326–333 |
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2012 |
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S. V. Khazanova, N. V. Baidus, B. N. Zvonkov, D. A. Pavlov, N. V. Malekhonova, V. E. Degtyarov, D. S. Smotrin, I. A. Bobrov, “Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1510–1514 ; Semiconductors, 46:12 (2012), 1476–1480 |
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