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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
Yu. V. Balakshin, A. V. Kozhemiako, S. Petrovic, M. Erich, A. A. Shemukhin, V. S. Chernysh, “Influence of the charge state of xenon ions on the depth distribution profile upon implantation into silicon”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1030–1036   ; Semiconductors, 53:8 (2019), 1011–1017 |
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A. V. Kozhemiako, A. P. Evseev, Yu. V. Balakshin, A. A. Shemukhin, “Features of defect formation in the nanostructured silicon under ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 810–815 ; Semiconductors, 53:6 (2019), 800–805 |
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2018 |
| 3. |
Yu. V. Balakshin, A. A. Shemukhin, A. V. Nazarov, A. V. Kozhemiako, V. S. Chernysh, “In situ modification and analysis of the composition and crystal structure of a silicon target by ion-beam methods”, Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018), 1900–1907 ; Tech. Phys., 63:12 (2018), 1861–1867 |
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2017 |
| 4. |
A. V. Kozhemiako, Yu. V. Balakshin, A. A. Shemukhin, V. S. Chernysh, “Study of the distribution profile of iron ions implanted into silicon”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 778–782 ; Semiconductors, 51:6 (2017), 745–750 |
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