|
|
|
Publications in Math-Net.Ru |
Citations |
|
2019 |
| 1. |
A. E. Belyaev, N. S. Boltovets, V. P. Klad'ko, N. V. Safryuk-Romanenko, A. I. Lubchenko, V. N. Sheremet, V. V. Shynkarenko, A. S. Slepova, V. A. Pilipenko, T. V. Petlitskaya, A. S. Pilipchuk, R. V. Konakova, A. V. Sachenko, “Features of the temperature dependence of the specific contact resistance of Au–Ti–Pd–$n^{+}$–$n$-Si diffusion silicon structures”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 485–492   ; Semiconductors, 53:4 (2019), 469–476 |
|
2016 |
| 2. |
A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, R. V. Konakova, S. A. Vitusevich, S. V. Novitskii, V. N. Sheremet, A. S. Pilipchuk, “The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 82–87 ; Tech. Phys. Lett., 42:6 (2016), 649–651 |
2
|
|
2014 |
| 3. |
A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, R. V. Konakova, L. M. Kapitanchuk, V. N. Sheremet, Yu. N. Sveshnikov, A. S. Pilipchuk, “Mechanism of current flow in a Au–Ti–Al–Ti–n$^+$-GaN ohmic contact in the temperature range of 4.2–300 K”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014), 1344–1347 ; Semiconductors, 48:10 (2014), 1308–1311 |
3
|
|
2012 |
| 4. |
N. V. Baidus, V. V. Vainberg, B. N. Zvonkov, A. S. Pilipchuk, V. N. Poroshin, O. G. Sarbeĭ, “Transport properties of InGaAs/GaAs Heterostructures with $\delta$-doped quantum wells”, Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 649–654 ; Semiconductors, 46:5 (2012), 631–636 |
10
|
|
| Organisations |
|
|
