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Publications in Math-Net.Ru |
Citations |
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2019 |
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R. R. Guseynov, V. A. Tanriverdiyev, G. L. Belenky, G. Kipshidze, E. N. Aliyeva, Kh. V. Aliguliyeva, E. G. Alizade, Kh. N. Akhmedova, N. A. Abdullaev, N. T. Mamedov, V. N. Zverev, “Electrical and optical properties of unrelaxed InAs$_{1-x}$Sb$_{x}$ heteroepitaxial structures”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 922–926   ; Semiconductors, 53:7 (2019), 906–910 |
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2017 |
| 2. |
R. R. Guseinov, V. A. Tanriverdiyev, G. Kipshidze, E. N. Aliyeva, Kh. V. Aliguliyeva, N. A. Abdullaev, N. T. Mamedov, “In InAs$_{1-x}$Sb$_{x}$ heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 551–557 ; Semiconductors, 51:4 (2017), 524–530 |
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2013 |
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M. Ya. Vinnichenko, L. E. Vorob'ev, D. A. Firsov, M. O. Mashko, R. M. Balagula, G. L. Belenky, L. Shterengas, G. Kipshidze, “Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1526–1529 ; Semiconductors, 47:11 (2013), 1513–1516 |
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