L. K. Orlov, N. L. Ivina, V. A. Bozhenkin, “Features of the initial stage of the heteroepitaxy of silicon layers on germanium when grown from silicon hydrides”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 995–1005; Semiconductors, 53:7 (2019), 979–988
