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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
S. N. Abolmasov, V. S. Levitskii, E. I. Terukov, A. S. Titov, “On sputter damage of silicon heterojunction solar cells and its recovery by illuminated annealing”, Fizika i Tekhnika Poluprovodnikov, 59:1 (2025), 53 |
| 2. |
A. V. Andrianov, E. I. Terukov, A. N. Aleshin, S. N. Abolmasov, “Manifestation of the electric field screening effect in the process of generation of terahertz radiation in $p$–$n$-heterostructures $a$-Si:H/$a$-SiC:H/$c$-Si at photoexcitation by ultrashort laser pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025), 22–26 |
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2023 |
| 3. |
A. V. Andrianov, A. N. Aleshin, S. N. Abolmasov, E. I. Terukov, A. O. Zahar'in, “Excitation of terahertz radiation in $p$–$n$-heterostructures based on $a$-Si:H/$c$-Si”, Fizika Tverdogo Tela, 65:5 (2023), 848–852 |
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2022 |
| 4. |
A. V. Andrianov, A. N. Aleshin, S. N. Abolmasov, E. I. Terukov, E. V. Beregulin, “Generation of terahertz radiation under the femtosecond laser excitation of a multilayer structure based on a-Si:H/a-SiC:H/c-Si”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:12 (2022), 825–829 ; JETP Letters, 116:12 (2022), 859–862 |
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| 5. |
S. N. Abolmasov, A. S. Abramov, V. N. Verbitskii, G. G. Shelopin, A. V. Kochergin, E. I. Terukov, “Formation of a copper contact grid on the surface of silicon heterojunction solar cells”, Fizika i Tekhnika Poluprovodnikov, 56:5 (2022), 516–525 |
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2019 |
| 6. |
S. N. Abolmasov, A. S. Abramov, A. V. Semenov, I. S. Shahray, E. I. Terukov, E. V. Malchukova, I. N. Trapeznikova, “Sensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1140 ; Semiconductors, 53:8 (2019), 1114–1119 |
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2017 |
| 7. |
S. N. Abolmasov, A. S. Abramov, G. A. Ivanov, E. I. Terukov, K. V. Emtsev, I. A. Nyapshaev, A. A. Bazeley, S. P. Gubin, D. Yu. Kornilov, S. V. Tkachev, V. P. Kim, D. A. Ryndin, V. I. Levchenkova, “Heterojunction solar cells based on single-crystal silicon with an inkjet-printed contact grid”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 74–79 ; Tech. Phys. Lett., 43:1 (2017), 78–80 |
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2016 |
| 8. |
A. M. Emel'yanov, S. N. Abolmasov, E. I. Terukov, “Photoluminescence at the fundamental absorption edge of single-crystal silicon textured without masking”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016), 55–61 ; Tech. Phys. Lett., 42:10 (2016), 1002–1004 |
| 9. |
A. V. Sachenko, Yu. V. Kryuchenko, V. P. Kostylyov, R. M. Korkishko, I. O. Sokolovskyi, A. S. Abramov, S. N. Abolmasov, D. A. Andronikov, A. V. Bobyl', I. E. Panaiotti, E. I. Terukov, A. S. Titov, M. Z. Shvarts, “The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016), 70–76 ; Tech. Phys. Lett., 42:3 (2016), 313–316 |
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