D. S. Prokhorov, V. G. Shengurov, S. A. Denisov, D. O. Filatov, A. V. Zdoroveyshchev, V. Yu. Chalkov, A. V. Zaitsev, M. V. Ved, M. V. Dorokhin, N. A. Baidakova, “Enhanced photoluminescence of heavily doped $n$-Ge/Si(001) layers”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1293–1296; Semiconductors, 53:9 (2019), 1262–1265
