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Publications in Math-Net.Ru |
Citations |
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2018 |
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V. A. Romaka, P. -F. Rogl, D. Frushart, D. Kaczorowski, “Mechanism of the generation of donor–acceptor pairs in heavily doped $n$-ZrNiSn with the Ga acceptor impurity”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 311–321   ; Semiconductors, 52:3 (2018), 294–304 |
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2017 |
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V. A. Romaka, P. Rogl, V. V. Romaka, D. Kaczorowski, V. Ya. Krayovskyy, Yu. V. Stadnyk, A. M. Horyn, “Features of the band structure and conduction mechanisms of $n$-HfNiSn heavily doped with Y”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 147–153 ; Semiconductors, 51:2 (2017), 139–145 |
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2016 |
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V. A. Romaka, P. Rogl, V. V. Romaka, D. Kaczorowski, Yu. V. Stadnyk, V. Ya. Krayovskyy, A. M. Horyn, “Features of conductivity mechanisms in heavily doped compensated V$_{1-x}$Ti$_{x}$FeSb semiconductor”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 877–885 ; Semiconductors, 50:7 (2016), 860–868 |
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2015 |
| 4. |
V. A. Romaka, P. Rogl, V. V. Romaka, Yu. V. Stadnyk, V. Ya. Krayovskyy, D. Kaczorowski, I. N. Nakonechnyy, A. M. Horyn, “Structural defect generation and band-structure features in the HfNi$_{1-x}$Co$_x$Sn semiconductor”, Fizika i Tekhnika Poluprovodnikov, 49:8 (2015), 1009–1015 ; Semiconductors, 49:8 (2015), 985–991 |
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V. A. Romaka, P. F. Rogl, V. V. Romaka, D. Kaczorowski, Yu. V. Stadnyk, R. O. Korzh, V. Ya. Krayovskyy, T. M. Kovbasyuk, “Features of the band structure and conduction mechanisms of $n$-HfNiSn semiconductor heavily Lu-doped”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 299–306 ; Semiconductors, 49:3 (2015), 290–297 |
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