|
|
|
Publications in Math-Net.Ru |
Citations |
|
2018 |
| 1. |
S. V. Plyatsko, L. V. Rashkovetskyi, “Deep radiation-induced defect centers created by a fast neutron flux in CdZnTe single crystals”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 322–326   ; Semiconductors, 52:3 (2018), 305–309 |
3
|
|
2013 |
| 2. |
S. V. Plyatsko, L. V. Rashkovetskyi, “New acceptor centers of the background impurities in $p$-CdZnTe”, Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 890–898 ; Semiconductors, 47:7 (2013), 899–907 |
3
|
|
1992 |
| 3. |
V. N. Babentsov, L. V. Rashkovetskyi, E. A. Sal'kov, N. I. Tarbaev, “Luminescent-profiling study of defect transformation in CdTe crystals under short-time annealing”, Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 1088–1095 |
|
| Organisations |
|
|
