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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
L. P. Avakyants, P. Yu. Bokov, I. P. Kazakov, M. A. Bazalevsky, P. M. Deev, A. V. Chervyakov, “Photoreflectance spectroscopy study of LT-GaAs layers grown on Si and GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 708–711 ; Semiconductors, 52:7 (2018), 849–852 |
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2015 |
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Yu. G. Sadof'ev, V. P. Martovitskii, M. A. Bazalevsky, A. V. Klekovkin, D. V. Averyanov, I. S. Vasil'evskii, “Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 128–133 ; Semiconductors, 49:1 (2015), 124–129 |
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