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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
K. S. Zhidyaev, A. B. Chigineva, N. V. Baidus, I. V. Samartsev, A. V. Kudrin, “Influence of emitter region doping level on the turn-on dynamics of low-voltage GaAs dynistors”, Fizika i Tekhnika Poluprovodnikov, 59:1 (2025), 48–52  |
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2024 |
| 2. |
K. S. Zhidyaev, A. B. Chigineva, N. V. Baidus, I. V. Samartsev, A. V. Kudrin, “Influence of strip mesastructure topology on a low-voltage GaAs thyristor main parameters”, Fizika i Tekhnika Poluprovodnikov, 58:3 (2024), 156–160  |
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2023 |
| 3. |
I. V. Samartsev, B. N. Zvonkov, N. V. Baidus, A. B. Chigineva, K. S. Zhidyaev, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Rykov, S. M. Plankina, A. V. Nezhdanov, A. V. Ershov, “MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current”, Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 495–500 |
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2022 |
| 4. |
A. B. Chigineva, N. V. Baidus, S. M. Nekorkin, K. S. Zhidyaev, V. E. Kotomina, I. V. Samartsev, “Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 56:1 (2022), 134–138 |
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2018 |
| 5. |
I. V. Samartsev, S. M. Nekorkin, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, I. Yu. Pashen'kin, N. V. Dikareva, A. B. Chigineva, “Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1460–1463 ; Semiconductors, 52:12 (2018), 1564–1567 |
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