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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
Yu. A. Danilov, V. A. Bykov, O. V. Vikhrova, D. A. Zdoroveishchev, I. L. Kalentyeva, R. N. Kriukov, A. E. Parafin, Yu. A. Agafonov, V. I. Zinenko, R. I. Batalov, V. F. Valeev, V. I. Nuzhdin, “Galvanomagnetic properties of GaMnAs layers obtained by ion implantation: the role of Mn$^+$ ion energy”, Fizika Tverdogo Tela, 66:6 (2024), 871–876   |
| 2. |
H. A. Novikov, R. I. Batalov, I. A. Faizrakhmanov, V. A. Shustov, S. G. Simakin, K. N. Galkin, N. A. Baidakova, “Optoelectronic properties of highly doped Ge:Sb layers prepared by ion-beam methods”, Optics and Spectroscopy, 132:11 (2024), 1189–1195 |
| 3. |
M. S. Kovalyov, I. M. Podlesnykh, R. I. Batalov, N. G. Stsepuro, S. I. Kudryashov, “Pulsed laser annealing of silicon implanted with manganese ions”, Optics and Spectroscopy, 132:1 (2024), 42–46 |
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2020 |
| 4. |
D. V. Ananchenko, S. V. Nikiforov, G. R. Ramazanova, R. I. Batalov, R. M. Bayazitov, H. A. Novikov, “Luminescence and thermal stability of $F$-type defects in sapphire irradiated with pulsed ion beams”, Optics and Spectroscopy, 128:2 (2020), 211–217 ; Optics and Spectroscopy, 128:2 (2020), 207–213 |
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2019 |
| 5. |
R. I. Batalov, V. I. Nuzhdin, V. F. Valeev, N. I. Nurgazizov, A. A. Bukharaev, G. D. Ivlev, A. L. Stepanov, “Photoelectric properties of composite Si layers with Ag nanoparticles obtained by ion implantation and laser annealing”, Optics and Spectroscopy, 126:2 (2019), 214–219 ; Optics and Spectroscopy, 126:2 (2019), 144–149 |
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2018 |
| 6. |
R. I. Batalov, V. V. Vorobev, V. I. Nuzhdin, V. F. Valeev, D. A. Bizyaev, A. A. Bukharaev, R. M. Bayazitov, Yu. N. Osin, G. D. Ivlev, A. L. Stepanov, “The effect of pulsed laser radiation on a Si layer with a high dose of implanted Ag$^{+}$ ions”, Optics and Spectroscopy, 124:4 (2018), 549–555 ; Optics and Spectroscopy, 125:4 (2018), 571–577 |
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2016 |
| 7. |
R. I. Batalov, V. V. Vorobev, V. I. Nuzhdin, V. F. Valeev, R. M. Bayazitov, N. M. Lyadov, Yu. N. Osin, A. L. Stepanov, “Fabrication of composite based on GeSi with Ag nanoparticles using ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 86:12 (2016), 104–110 ; Tech. Phys., 61:12 (2016), 1861–1867 |
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2015 |
| 8. |
H. A. Novikov, R. I. Batalov, R. M. Bayazitov, I. A. Faizrakhmanov, G. D. Ivlev, S. L. Prokopyev, “Optical diagnostics of the laser-induced phase transformations in thin germanium films on silicon, sapphire, and fused silica”, Zhurnal Tekhnicheskoi Fiziki, 85:3 (2015), 89–95 ; Tech. Phys., 60:3 (2015), 406–412 |
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| 9. |
H. A. Novikov, R. I. Batalov, R. M. Bayazitov, I. A. Faizrakhmanov, N. M. Lyadov, V. A. Shustov, K. N. Galkin, N. G. Galkin, I. M. Chernev, G. D. Ivlev, S. L. Prokopyev, P. I. Gaiduk, “Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 746–752 ; Semiconductors, 49:6 (2015), 729–735 |
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2013 |
| 10. |
N. G. Galkin, S. V. Vavanova, K. N. Galkin, R. I. Batalov, R. M. Bayazitov, V. I. Nuzhdin, “Pulsed nanosecond annealing of magnesium-implanted silicon”, Zhurnal Tekhnicheskoi Fiziki, 83:1 (2013), 99–104 ; Tech. Phys., 58:1 (2013), 94–99 |
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