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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
V. A. Romaka, P. Rogl, V. V. Romaka, D. Kaczorowski, V. Ya. Krayovskyy, Yu. V. Stadnyk, A. M. Horyn, “Features of the band structure and conduction mechanisms of $n$-HfNiSn heavily doped with Y”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 147–153   ; Semiconductors, 51:2 (2017), 139–145 |
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2016 |
| 2. |
V. A. Romaka, P. Rogl, V. V. Romaka, D. Kaczorowski, Yu. V. Stadnyk, V. Ya. Krayovskyy, A. M. Horyn, “Features of conductivity mechanisms in heavily doped compensated V$_{1-x}$Ti$_{x}$FeSb semiconductor”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 877–885 ; Semiconductors, 50:7 (2016), 860–868 |
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2015 |
| 3. |
V. A. Romaka, P. Rogl, V. V. Romaka, Yu. V. Stadnyk, V. Ya. Krayovskyy, D. Kaczorowski, I. N. Nakonechnyy, A. M. Horyn, “Structural defect generation and band-structure features in the HfNi$_{1-x}$Co$_x$Sn semiconductor”, Fizika i Tekhnika Poluprovodnikov, 49:8 (2015), 1009–1015 ; Semiconductors, 49:8 (2015), 985–991 |
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V. A. Romaka, P. F. Rogl, V. V. Romaka, D. Kaczorowski, Yu. V. Stadnyk, R. O. Korzh, V. Ya. Krayovskyy, T. M. Kovbasyuk, “Features of the band structure and conduction mechanisms of $n$-HfNiSn semiconductor heavily Lu-doped”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 299–306 ; Semiconductors, 49:3 (2015), 290–297 |
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2014 |
| 5. |
V. A. Romaka, P. Rogl, V. V. Romaka, Yu. V. Stadnyk, R. O. Korzh, V. Ya. Krayovskyy, A. M. Horyn, “Features of the band structure and conduction mechanisms in the $n$-HfNiSn semiconductor heavily doped with Ru”, Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1585–1591 ; Semiconductors, 48:12 (2014), 1545–1551 |
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2013 |
| 6. |
V. A. Romaka, P. Rogl, Yu. V. Stadnyk, V. V. Romaka, E. K. Hlil, V. Ya. Krayovskyy, A. M. Horyn, “Features of conduction mechanisms in $n$-HfNiSn semiconductor heavily doped with a Rh acceptor impurity”, Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1157–1164 ; Semiconductors, 47:9 (2013), 1145–1152 |
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V. A. Romaka, P. F. Rogl, V. V. Romaka, Yu. V. Stadnyk, E. K. Hlil, V. Ya. Krayovskyy, A. M. Horyn, “Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor $n$-ZrNiSn”, Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 882–889 ; Semiconductors, 47:7 (2013), 892–898 |
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2012 |
| 8. |
V. A. Romaka, P. Rogl, Yu. V. Stadnyk, V. V. Romaka, E. K. Hlil, V. Ya. Krayovskyy, A. M. Horyn, “Features of the conduction mechanisms of the $n$-HfNiSn semiconductor heavily doped with the Co acceptor impurity”, Fizika i Tekhnika Poluprovodnikov, 46:9 (2012), 1130–1137 ; Semiconductors, 46:9 (2012), 1106–1113 |
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V. A. Romaka, P. Rogl, Yu. V. Stadnyk, E. K. Hlil, V. V. Romaka, A. M. Horyn, “Features of conductivity of the intermetallic semiconductor $n$-ZrNiSn heavily doped with a Bi donor impurity”, Fizika i Tekhnika Poluprovodnikov, 46:7 (2012), 910–917 ; Semiconductors, 46:7 (2012), 887–893 |
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