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Palmour, John Williams


https://www.mathnet.ru/eng/person193372
List of publications on Google Scholar

Publications in Math-Net.Ru Citations
2017
1. V. S. Yuferev, M. E. Levinshteĭn, P. A. Ivanov, Jon Q. Zhang, John W. Palmour, “Transient switch-off of a 4$H$-SiC bipolar transistor from the deep-saturation mode”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1243–1248  mathnet  elib; Semiconductors, 51:9 (2017), 1194–1199 2
2. T. T. Ìnatsakanov, A. G. Tandoev, M. E. Levinshteĭn, S. N. Yurkov, J. W. Palmour, “Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1125–1130  mathnet  elib; Semiconductors, 51:8 (2017), 1081–1086 1
3. S. N. Yurkov, T. T. Ìnatsakanov, M. E. Levinshteĭn, A. G. Tandoev, J. W. Palmour, “Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  234–239  mathnet  elib; Semiconductors, 51:2 (2017), 225–231
2016
4. M. E. Levinshteĭn, P. A. Ivanov, Q. J. Zhang, J. W. Palmour, “Isothermal current–voltage characteristics of high-voltage 4$H$-SiC junction barrier Schottky rectifiers”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  668–673  mathnet  elib; Semiconductors, 50:5 (2016), 656–661 1
5. M. E. Levinshteĭn, T. T. Ìnatsakanov, S. N. Yurkov, A. G. Tandoev, Sei-Hyung Ryu, J. W. Palmour, “High-voltage silicon-carbide thyristor with an $n$-type blocking base”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  408–414  mathnet  elib; Semiconductors, 50:3 (2016), 404–410 7
2013
6. T. T. Ìnatsakanov, A. G. Tandoev, M. E. Levinshteĭn, S. N. Yurkov, J. W. Palmour, “Violation of neutrality and occurrence of $S$-shaped current-voltage characteristic for doped semiconductors under double injection”, Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  302–309  mathnet  elib; Semiconductors, 47:3 (2013), 327–334 1
7. V. S. Yuferev, M. E. Levinshteĭn, J. W. Palmour, “Specific features of the steady-state carrier distribution and holding current in an optically triggered SiC thyristor”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  118–123  mathnet  elib; Semiconductors, 47:1 (2013), 116–121 3
2012
8. M. E. Levinshteĭn, T. T. Ìnatsakanov, S. N. Yurkov, J. W. Palmour, “Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread”, Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1224–1229  mathnet  elib; Semiconductors, 46:9 (2012), 1201–1206 3
2011
9. M. E. Levinshtein, P. A. Ivanov, J. W. Palmour, A. K. Agarwal, Ì. Ê. Das, “Features of degradation in high-voltage 4H-SiC $p$$i$$n$ diodes under the action of forward current pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:8 (2011),  7–12  mathnet  elib; Tech. Phys. Lett., 37:4 (2011), 347–349

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