|
|
|
Publications in Math-Net.Ru |
Citations |
|
2017 |
| 1. |
V. S. Yuferev, M. E. Levinshteĭn, P. A. Ivanov, Jon Q. Zhang, John W. Palmour, “Transient switch-off of a 4$H$-SiC bipolar transistor from the deep-saturation mode”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1243–1248 ; Semiconductors, 51:9 (2017), 1194–1199 |
2
|
| 2. |
T. T. Ìnatsakanov, A. G. Tandoev, M. E. Levinshteĭn, S. N. Yurkov, J. W. Palmour, “Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1125–1130 ; Semiconductors, 51:8 (2017), 1081–1086 |
1
|
| 3. |
S. N. Yurkov, T. T. Ìnatsakanov, M. E. Levinshteĭn, A. G. Tandoev, J. W. Palmour, “Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 234–239 ; Semiconductors, 51:2 (2017), 225–231 |
|
2016 |
| 4. |
M. E. Levinshteĭn, P. A. Ivanov, Q. J. Zhang, J. W. Palmour, “Isothermal current–voltage characteristics of high-voltage 4$H$-SiC junction barrier Schottky rectifiers”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 668–673 ; Semiconductors, 50:5 (2016), 656–661 |
1
|
| 5. |
M. E. Levinshteĭn, T. T. Ìnatsakanov, S. N. Yurkov, A. G. Tandoev, Sei-Hyung Ryu, J. W. Palmour, “High-voltage silicon-carbide thyristor with an $n$-type blocking base”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 408–414 ; Semiconductors, 50:3 (2016), 404–410 |
7
|
|
2013 |
| 6. |
T. T. Ìnatsakanov, A. G. Tandoev, M. E. Levinshteĭn, S. N. Yurkov, J. W. Palmour, “Violation of neutrality and occurrence of $S$-shaped current-voltage characteristic for doped semiconductors under double injection”, Fizika i Tekhnika Poluprovodnikov, 47:3 (2013), 302–309 ; Semiconductors, 47:3 (2013), 327–334 |
1
|
| 7. |
V. S. Yuferev, M. E. Levinshteĭn, J. W. Palmour, “Specific features of the steady-state carrier distribution and holding current in an optically triggered SiC thyristor”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 118–123 ; Semiconductors, 47:1 (2013), 116–121 |
3
|
|
2012 |
| 8. |
M. E. Levinshteĭn, T. T. Ìnatsakanov, S. N. Yurkov, J. W. Palmour, “Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread”, Fizika i Tekhnika Poluprovodnikov, 46:9 (2012), 1224–1229 ; Semiconductors, 46:9 (2012), 1201–1206 |
3
|
|
2011 |
| 9. |
M. E. Levinshtein, P. A. Ivanov, J. W. Palmour, A. K. Agarwal, Ì. Ê. Das, “Features of degradation in high-voltage 4H-SiC $p$–$i$–$n$ diodes under the action of forward current pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:8 (2011), 7–12 ; Tech. Phys. Lett., 37:4 (2011), 347–349 |
|
| Organisations |
|
|