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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. L. Oleynik, “On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 240–246   ; Semiconductors, 51:2 (2017), 232–238 |
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2013 |
| 2. |
I. A. Prudaev, I. Yu. Golygin, S. B. Shirapov, I. S. Romanov, S. S. Khludkov, O. P. Tolbanov, “Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1391–1395 ; Semiconductors, 47:10 (2013), 1382–1386 |
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