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Publications in Math-Net.Ru |
Citations |
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2017 |
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E. V. Erofeev, I. V. Fedin, I. V. Kutkov, Y. N. Yurjev, “Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 253–257 ; Semiconductors, 51:2 (2017), 245–248 |
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