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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
V. G. Tikhomirov, S. V. Chizhikov, A. G. Gudkov, V. M. Ustinov, “The effect of surface traps on the static characteristics and the saturation current spread in the channel of GaN HEMTs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023), 43–46   |
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2017 |
| 2. |
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, O. E. Tereshchenko, K. K. Abgaryan, D. L. Reviznikov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, V. G. Tikhomirov, I. P. Prosvirin, “AlN/GaN heterostructures for normally-off transistors”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 395–402 ; Semiconductors, 51:3 (2017), 379–386 |
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2016 |
| 3. |
V. G. Tikhomirov, V. E. Zemlyakov, V. V. Volkov, Ya. M. Parnes, V. N. V’yuginov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsul'nikov, N. A. Cherkashin, M. N. Mizerov, V. M. Ustinov, “Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 245–249 ; Semiconductors, 50:2 (2016), 244–248 |
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