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Publications in Math-Net.Ru |
Citations |
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2017 |
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A. Nasri, A. Boubaker, W. Khaldi, B. Hafsi, A. Kalboussi, “Single electron transistor: energy-level broadening effect and thermionic contribution”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1711–1715   ; Semiconductors, 51:12 (2017), 1656–1660 |
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Slah Hlali, Neila Hizem, Adel Kalboussi, “Charge density at the Al$_{2}$O$_{3}$/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1682–1689 ; Semiconductors, 51:12 (2017), 1625–1633 |
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2016 |
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S. Chatbouri, M. Troudi, N. Sghaier, A. Kalboussi, V. Aimez, D. Drouin, A. Souifi, “Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1185–1189 ; Semiconductors, 50:9 (2016), 1163–1167 |
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