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Publications in Math-Net.Ru |
Citations |
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2016 |
| 1. |
È. P. Domashevskaya, E. A. Mikhailyuk, T. V. Prokopova, N. N. Bezryadin, “Deep centers at the interface in In$_{2x}$Ga$_{2(1-x)}$Te$_{3}$/InAs and In$_{2}$Te$_{3}$/InAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 313–317   ; Semiconductors, 50:3 (2016), 309–313 |
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2014 |
| 2. |
N. N. Bezryadin, G. I. Kotov, I. N. Arsent'ev, S. V. Kuzubov, Yu. N. Vlasov, G. A. Panin, A. V. Kortunov, “Passivation of the GaP(111) surface by treatment in selenium vapors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:3 (2014), 20–26 ; Tech. Phys. Lett., 40:2 (2014), 104–107 |
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2012 |
| 3. |
N. N. Bezryadin, G. I. Kotov, I. N. Arsent'ev, Yu. N. Vlasov, A. A. Starodubtsev, “Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states in $n$-GaAs (100)”, Fizika i Tekhnika Poluprovodnikov, 46:6 (2012), 756–760 ; Semiconductors, 46:6 (2012), 736–740 |
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