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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
H. A. Novikov, R. I. Batalov, I. A. Faizrakhmanov, V. A. Shustov, S. G. Simakin, K. N. Galkin, N. A. Baidakova, “Optoelectronic properties of highly doped Ge:Sb layers prepared by ion-beam methods”, Optics and Spectroscopy, 132:11 (2024), 1189–1195   |
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2020 |
| 2. |
D. V. Ananchenko, S. V. Nikiforov, G. R. Ramazanova, R. I. Batalov, R. M. Bayazitov, H. A. Novikov, “Luminescence and thermal stability of $F$-type defects in sapphire irradiated with pulsed ion beams”, Optics and Spectroscopy, 128:2 (2020), 211–217 ; Optics and Spectroscopy, 128:2 (2020), 207–213 |
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2015 |
| 3. |
H. A. Novikov, R. I. Batalov, R. M. Bayazitov, I. A. Faizrakhmanov, G. D. Ivlev, S. L. Prokopyev, “Optical diagnostics of the laser-induced phase transformations in thin germanium films on silicon, sapphire, and fused silica”, Zhurnal Tekhnicheskoi Fiziki, 85:3 (2015), 89–95 ; Tech. Phys., 60:3 (2015), 406–412 |
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| 4. |
H. A. Novikov, R. I. Batalov, R. M. Bayazitov, I. A. Faizrakhmanov, N. M. Lyadov, V. A. Shustov, K. N. Galkin, N. G. Galkin, I. M. Chernev, G. D. Ivlev, S. L. Prokopyev, P. I. Gaiduk, “Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 746–752 ; Semiconductors, 49:6 (2015), 729–735 |
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